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PDF MRF140 Data sheet ( Hoja de datos )
| Número de pieza | MRF140 | |
| Descripción | N-CHANNEL MOS LINEAR RF POWER FET | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MRF140 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field-Effect Transistor
N–Channel Enhancement–Mode
Designed primarily for linear large–signal output stages up to 150 MHz
frequency range.
• Specified 28 Volts, 30 MHz Characteristics
Output Power = 150 Watts
Power Gain = 15 dB (Typ)
Efficiency = 40% (Typ)
• Superior High Order IMD
• IMD(d3) (150 W PEP) — – 30 dB (Typ)
• IMD(d11) (150 W PEP) — – 60 dB (Typ)
• 100% Tested For Load Mismatch At All Phase Angles With
30:1 VSWR
D
Order this document
by MRF140/D
MRF140
150 W, to 150 MHz
N–CHANNEL MOS
LINEAR RF POWER
FET
G
S CASE 211–11, STYLE 2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
Drain–Gate Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
65
Vdc
VDGO
65
Vdc
VGS ± 40 Vdc
ID 16 Adc
PD 300 Watts
1.7 W/°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Tstg – 65 to +150
TJ 200
°C
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC 0.6 °C/W
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
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REV 8
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
MRF140
1
1 page  
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RF POWER MOSFET CONSIDERATIONS
MOSFET CAPACITANCES
The physical structure of a MOSFET results in capacitors
between the terminals. The metal oxide gate structure
determines the capacitors from gate–to–drain (Cgd), and
gate–to–source (Cgs). The PN junction formed during the
fabrication of the RF MOSFET results in a junction capaci-
tance from drain–to–source (Cds).
These capacitances are characterized as input (Ciss),
output (Coss) and reverse transfer (Crss) capacitances on data
sheets. The relationships between the inter–terminal capaci-
tances and those given on data sheets are shown below. The
Ciss can be specified in two ways:
1. Drain shorted to source and positive voltage at the gate.
2. Positive voltage of the drain in respect to source and zero
volts at the gate. In the latter case the numbers are lower.
However, neither method represents the actual operat-
ing conditions in RF applications.
GATE
Cgd
Cgs
DRAIN
Cds
SOURCE
Ciss = Cgd + Cgs
Coss = Cgd + Cds
Crss = Cgd
LINEARITY AND GAIN CHARACTERISTICS
In addition to the typical IMD and power gain data
presented, Figure 5 may give the designer additional informa-
tion on the capabilities of this device. The graph represents the
small signal unity current gain frequency at a given drain
current level. This is equivalent to fT for bipolar transistors.
Since this test is performed at a fast sweep speed, heating of
the device does not occur. Thus, in normal use, the higher
temperatures may degrade these characteristics to some
extent.
DRAIN CHARACTERISTICS
One figure of merit for a FET is its static resistance in the
full–on condition. This on–resistance, VDS(on), occurs in the
linear region of the output characteristic and is specified under
specific test conditions for gate–source voltage and drain
current. For MOSFETs, VDS(on) has a positive temperature
coefficient and constitutes an important design consideration
at high temperatures, because it contributes to the power
dissipation within the device.
GATE CHARACTERISTICS
The gate of the RF MOSFET is a polysilicon material, and
is electrically isolated from the source by a layer of oxide. The
input resistance is very high — on the order of 109 ohms —
resulting in a leakage current of a few nanoamperes.
Gate control is achieved by applying a positive voltage
slightly in excess of the gate–to–source threshold voltage,
VGS(th).
Gate Voltage Rating — Never exceed the gate voltage
rating. Exceeding the rated VGS can result in permanent
damage to the oxide layer in the gate region.
Gate Termination — The gates of these devices are
essentially capacitors. Circuits that leave the gate open–cir-
cuited or floating should be avoided. These conditions can
result in turn–on of the devices due to voltage build–up on the
input capacitor due to leakage currents or pickup.
Gate Protection — These devices do not have an internal
monolithic zener diode from gate–to–source. If gate protection
is required, an external zener diode is recommended.
EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY
Collector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Drain
Emitter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Source
Base . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gate
V(BR)CES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V(BR)DSS
VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGO
IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
ICES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDSS
IEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IGSS
VBE(on) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS(th)
VCE(sat) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS(on)
Cib . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Ciss
Cob . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Coss
hfe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gfs
RCE(sat) =
VCE(sat)
IC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . rDS(on) =
VDS(on)
ID
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MOTOROLA RF DEVICE DATA
MRF140
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MRF140.PDF ] | |
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