PDF MRF1535T1 Data sheet ( Hoja de datos )

Número de pieza	MRF1535T1
Descripción	RF Power Field Effect Transistors
Fabricantes	Motorola Semiconductors
Logotipo
Hay una vista previa y un enlace de descarga de MRF1535T1 (archivo pdf) en la parte inferior de esta página. Total 16 Páginas
No Preview Available ! ( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1535T1/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequen- cies to 520 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 12.5 volt mobile FM equipment. • Specified Performance @ 520 MHz, 12.5 Volts Output Power — 35 Watts Power Gain — 10.0 dB Efficiency — 50% • Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 520 MHz, 2 dB Overdrive • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters • Broadband–Full Power Across the Band: 135–175 MHz 400–470 MHz 450–520 MHz • Broadband UHF/VHF Demonstration Amplifier Information Available Upon Request • In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF1535T1 MRF1535FT1 520 MHz, 35 W, 12.5 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs CASE 1264–09, STYLE 1 TO–272 PLASTIC MRF1535T1 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Operating Junction Temperature CASE 1264A–02, STYLE 1 TO–272 STRAIGHT LEAD PLASTIC MRF1535FT1 Symbol VDSS VGS ID PD Tstg TJ Value 40 ±20 6 135 0.50 –65 to +150 175 Unit Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) Calculated based on the formula PD = TJ – TC RθJC Symbol Max Unit RθJC 0.90 °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 5 www.DaMMtoaOtSoTrhoeOlae,RtI4nOUc.L.2cA0o0mR3 F DEVICE DATA www.DataSheet4U.com MRF1535T1 MRF1535FT1 1 1 page VGG C14 C13 + C12 C11 R3 RF N1 C1 INPUT Z1 C2 Z2 C3 C4 Z3 C5 R2 R1 C10 Z4 Z5 Z6 C6 C7 C8 C9 B1 C25 L1 C24 VDD + C23 C22 DUT Z7 Z8 Z9 C19 Z10 N2 RF OUTPUT C15 C16 C17 C18 C20 C21 B1 C1 C2 C3 C4 C5 C6, C7 C8, C15, C16 C9 C10, C14, C25 C11, C22 C12, C24 C13, C23 C17, C18 C19 C20 Ferroxcube VK200 160 pF, 100 mil Chip Capacitor 3 pF, 100 mil Chip Capacitor 3.6 pF, 100 mil Chip Capacitor 2.2 pF, 100 mil Chip Capacitor 10 pF, 100 mil Chip Capacitor 16 pF, 100 mil Chip Capacitors 27 pF, 100 mil Chip Capacitors 43 pF, 100 mil Chip Capacitor 160 pF, 100 mil Chip Capacitors 10 µF, 50 V Electrolytic Capacitors 1,200 pF, 100 mil Chip Capacitors 0.1 µF, 100 mil Chip Capacitors 24 pF, 100 mil Chip Capacitors 160 pF, 100 mil Chip Capacitor 8.2 pF, 100 mil Chip Capacitor C21 L1 N1, N2 R1 R2 R3 Z1 Z2 Z3 Z4 Z5, Z8 Z6, Z7 Z9 Z10 Board 1.8 pF, 100 mil Chip Capacitor 47.5 nH, 5 Turn, Coilcraft Type N Flange Mounts 500 Ω Chip Resistor (0805) 1 kΩ Chip Resistor (0805) 33 kΩ, 1/8 W Chip Resistor 0.480″ x 0.080″ Microstrip 1.070″ x 0.080″ Microstrip 0.290″ x 0.080″ Microstrip 0.160″ x 0.080″ Microstrip 0.120″ x 0.080″ Microstrip 0.120″ x 0.223″ Microstrip 1.380″ x 0.080″ Microstrip 0.625″ x 0.080″ Microstrip Glass Teflon, 31 mils Figure 10. 450 – 520 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 450 – 520 MHz 60 0 450 MHz 50 500 MHz 40 470 MHz 520 MHz -5 VDD = 12.5 Vdc 30 450 MHz 20 10 VDD = 12.5 Vdc 0 01 2 3 4 56 Pin, INPUT POWER (WATTS) Figure 11. Output Power versus Input Power -10 470 MHz -15 0 520 MHz 500 MHz 10 20 30 40 50 60 Pout, OUTPUT POWER (WATTS) Figure 12. Input Return Loss versus Output Power MOTOROLA RF DEVICE DATA MRF1535T1 MRF1535FT1 5 5 Page NOTES MOTOROLA RF DEVICE DATA MRF1535T1 MRF1535FT1 11 11 Page

Páginas	Total 16 Páginas
PDF Descargar	[ Datasheet MRF1535T1.PDF ]

Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
MRF1535T1	RF Power Field Effect Transistors	Motorola Semiconductors
MRF1535T1	RF Power Field Effect Transistors	Motorola Semiconductors

Número de pieza	Descripción	Fabricantes
SLA6805M	High Voltage 3 phase Motor Driver IC.	Sanken
SDC1742	12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.	Analog Devices

DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.

DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar