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PDF MB84VD2118xA Data sheet ( Hoja de datos )
| Número de pieza | MB84VD2118xA | |
| Descripción | (MB84VD2118xA / MB84VD2119xA) 16M ( x 8/ x 16) FLASH MEMORY & 4M ( x 8/ x 16) STATIC RAM | |
| Fabricantes | Fujitsu Media Devices | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MB84VD2118xA (archivo pdf) en la parte inferior de esta página. Total 30 Páginas | ||
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( DataSheet : www.DataSheet4U.com )
FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-50202-3E
Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM
CMOS
16M ( × 8/ × 16) FLASH MEMORY &
4M ( × 8/ × 16) STATIC RAM
MB84VD2118XA-85/MB84VD2119XA-85
s FEATURES
• Power supply voltage of 2.7 V to 3.6 V
• High performance
85 ns maximum access time
• Operating Temperature
−25 °C to +85 °C
• Package 69-ball FBGA, 56-pin TSOP(I)
s PRODUCT LINE UP
(Continued)
Ordering Part No.
VCCf*, VCCs* = 3.0 V
+0.6 V
−0.3 V
Max. Address Access Time (ns)
Max. CE Access Time (ns)
Max. OE Access Time (ns)
Flash Memory
SRAM
MB84VD2118XA-85/MB84VD2119XA-85
85 85
85 85
35 45
*: Both VCCf and VCCs must be in recommended operation range when either part is being accessed.
s PACKAGES
69-ball plastic FBGA
56-pin plastic TSOP(I)
www.DataSheet4U.com
(BGA-69P-M02)
(FPT-56P-M04)
www.DataSheet4U.com
1 page  
MB84VD2118XA-85/MB84VD2119XA-85
s PIN DESCRIPTION
Pin name
A0 to A17
A-1, A18, A19
SA
DQ0 to DQ15
CEf
CE1s
CE2s
OE
WE
RY/BY
UBs
LBs
CIOf
CIOs
RESET
WP/ACC
N.C.
VSS
VCCf
VCCs
Function
Address Inputs (Common)
Address Input (Flash)
Address Input (SRAM)
Data Inputs/Outputs (Common)
Chip Enable (Flash)
Chip Enable (SRAM)
Chip Enable (SRAM)
Output Enable (Common)
Write Enable (Common)
Ready/Busy Outputs (Flash) Open Drain Output
Upper Byte Control (SRAM)
Lower Byte Control (SRAM)
I/O Configuration (Flash)
CIOf = VCCf is Word mode ( × 16), CIOf = VSS is Byte mode ( × 8)
I/O Configuration (SRAM)
CIOs = VCCs is Word mode ( × 16), CIOs = VSS is Byte mode ( × 8)
Hardware Reset Pin/Sector Protection Unlock (Flash)
Write Protect / Acceleration (Flash)
No Internal Connection
Device Ground (Common)
Device Power Supply (Flash)
Device Power Supply (SRAM)
Input/Output
I
I
I
I/O
I
I
I
I
I
O
I
I
I
I
I
I
Power
Power
Power
5
5 Page 
MB84VD2118XA-85/MB84VD2119XA-85
• Eight 4 K words, and thirty one 32 K words.
• Individual-sector, multiple-sector, or bulk-erase capability.
Word mode Byte mode
SA38 :
SA37 :
Bank 2
MB84VD21194A
SA36 :
SA35 :
SA34 :
Bank 2
MB84VD21193A
SA33 :
SA32 :
SA31 :
Bank 2
MB84VD21192A
SA30 :
SA29 :
SA28 :
SA27 :
Bank 2 SA26 :
MB84VD21191A SA25 :
SA24 :
SA23 :
SA22 :
SA21 :
SA20 :
SA19 :
SA18 :
SA17 :
SA16 :
SA15 :
SA14 :
SA13 :
Bank 1
MB84VD21194A
SA12 :
SA11 :
SA10 :
Bank 1
MB84VD21193A
SA9 :
SA8 :
SA7 :
SA6 :
Bank 1
SA5 :
MB84VD21192A
SA4 :
Bank 1 SA3 :
MB84VD21191A SA2 :
SA1 :
SA0 :
64KB
64KB
64KB
64KB
64KB
64KB
64KB
64KB
64KB
64KB
64KB
64KB
64KB
64KB
64KB
64KB
64KB
64KB
64KB
64KB
64KB
64KB
64KB
64KB
64KB
64KB
64KB
64KB
64KB
64KB
64KB
8KB
8KB
8KB
8KB
8KB
8KB
8KB
8KB
(32KW)
(32KW)
(32KW)
(32KW)
(32KW)
(32KW)
(32KW)
(32KW)
(32KW)
(32KW)
(32KW)
(32KW)
(32KW)
(32KW)
(32KW)
(32KW)
(32KW)
(32KW)
(32KW)
(32KW)
(32KW)
(32KW)
(32KW)
(32KW)
(32KW)
(32KW)
(32KW)
(32KW)
(32KW)
(32KW)
(32KW)
(4KW)
(4KW)
(4KW)
(4KW)
(4KW)
(4KW)
(4KW)
(4KW)
0FFFFFh
0F8000h
0F0000h
0E8000h
0E0000h
0D8000h
0D0000h
0C8000h
0C0000h
0B8000h
0B0000h
0A8000h
0A0000h
098000h
090000h
088000h
080000h
078000h
070000h
068000h
060000h
058000h
050000h
048000h
040000h
038000h
030000h
028000h
020000h
018000h
010000h
008000h
007000h
006000h
005000h
004000h
003000h
002000h
001000h
000000h
1FFFFFh
1F0000h
1E0000h
1D0000h
1C0000h
1B0000h
1A0000h
190000h
180000h
170000h
160000h
150000h
140000h
130000h
120000h
110000h
100000h
0F0000h
0E0000h
0D0000h
0C0000h
0B0000h
0A0000h
090000h
080000h
070000h
060000h
050000h
040000h
030000h
020000h
010000h
00E000h
00C000h
00A000h
008000h
006000h
004000h
002000h
000000h
MB84VD2119XA Sector Architecture (Bottom Boot Block)
11
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet MB84VD2118xA.PDF ] | |
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