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PDF STP50NE08 Data sheet ( Hoja de datos )
| Número de pieza | STP50NE08 | |
| Descripción | N-Channel Enhancement Mode Power MOS Transistor | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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eet4U.com STP50NE08
Sh N - CHANNEL ENHANCEMENT MODE
ata " SINGLE FEATURE SIZE™ " POWER MOSFET
w.DTYPE
VDSS
RDS(on)
w STP50NE08
80 V <0.024 Ω
w s TYPICAL RDS(on) = 0.020 Ω
ID
50 A
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
ms LOW GATE CHARGE AT 100 oC
s APPLICATION ORIENTED
oCHARACTERIZATION
.cDESCRIPTION
This Power MOSFET is the latest development of
USGS-THOMSON unique "Single Feature Size™ "
strip-based process. The resulting transistor
t4shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a
eremarkable manufacturing reproducibility.
eAPPLICATIONS
hs HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
Ss MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
tas AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
.DaABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
wVDS Drain-source Voltage (VGS = 0)
wVDGR
VGS
wID
mID
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
oIDM(•)
.cPtot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
t4UDerating Factor
edv/dt (1) Peak Diode Recovery voltage slope
eTstg Storage Temperature
ShTj Max. Operating Junction Temperature
ta(•) Pulse width limited by safe operating area
www.DaMarch 1998
Value
Unit
80 V
80 V
± 20
V
50 A
35 A
200 A
150 W
1 W/oC
6 V/ns
-65 to 175
oC
175 oC
(1) ISD ≤ 50 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/8
1 page  
Normalized Gate Threshold Voltage vs
Temperature
STP50NE08
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STP50NE08.PDF ] | |
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