|
|
PDF 2SK3943 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3943 | |
| Descripción | SWITCHING N-CHANNEL POWER MOSFET | |
| Fabricantes | NEC | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2SK3943 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3943
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3943 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Super low on-state resistance
RDS(on)1 = 3.5 mΩ MAX. (VGS = 10 V, ID = 41 A)
• Low Ciss: Ciss = 5800 pF TYP.
ORDERING INFORMATION
PART NUMBER
2SK3943-ZP
PACKAGE
TO-263 (MP-25ZP)
(TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
40
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±82
±328
Total Power Dissipation (TC = 25°C)
PT1
104
Total Power Dissipation (TA = 25°C)
PT2
1.5
Channel Temperature
Storage Temperature
Single Avalanche Energy Note2
Repetitive Avalanche Current Note3
Repetitive Avalanche Energy Note3
Tch 150
Tstg −55 to +150
EAS 185
IAR 43
EAR 185
V
V
A
A
W
W
°C
°C
mJ
A
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH
3. Tch(peak) ≤ 150°C, RG = 25 Ω
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17188EJ1V0DS00 (1st edition)
Date Published February 2005 NS CP(K)
Printed in Japan
2005
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
10
9 ID = 41 A
8 Pulsed
7
6
5 VGS = 5.5 V
4
3
2 10 V
1
0
-75 -25 25 75 125 175
Tch - Channel Temperature - °C
1000
100
10
SWITCHING CHARACTERISTICS
VDD = 20 V
VGS = 10 V
RG = 0 Ω
td(off)
td(on)
tf
tr
1
0.1
1000
1 10
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
100
VGS = 10 V
10
0V
1
0.1
0.01
0
Pulsed
0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
2SK3943
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
10000
Ciss
1000
Coss
VGS = 0 V
f = 1 MHz
Crss
100
0.01 0.1 1 10
VDS - Drain to Source Voltage - V
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
35 14
ID = 82 A
30 VDD = 32 V
12
25
20 V
8V
10
20 8
15 6
10 VGS 4
5 VDS
2
00
0 20 40 60 80 100
QG - Gate Charge - nC
1000
100
10
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
Tch = −55°C
25°C
75°C
125°C
150°C
1
0.1
0.01
0
VGS = 0 V
Pulsed
0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
Data Sheet D17188EJ1V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SK3943.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SK3940 | Field Effect Transistor Silicon N-Channel MOS Type |  Toshiba |
| 2SK3943 | SWITCHING N-CHANNEL POWER MOSFET | NEC |
| 2SK3944 | 2SK3944 |  Sanyo Semicon Device |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |