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PDF PFM18030 Data sheet ( Hoja de datos )
| Número de pieza | PFM18030 | |
| Descripción | 2-Stage Power Module Enhancement-Mode Lateral MOSFETs | |
| Fabricantes | Cree Research | |
| Logotipo |  |
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PFM1S8h0e3et04US.PcEomCIFICATION PRELIMINARY1805-1880 MHz, 30W, 2-Stage Power Module
taEnhancement-Mode Lateral MOSFETs
.DaThis versatile DCS module provides excellent linearity and efficiency in a
wlow-cost surface mount package. The PFM18030SM includes two stages
wof amplification, along with internal sense FETs that are on the same
w silicon die as the RF devices. These thermally coupled sense FETs
msimplify the task of bias temperature compensation of the overall amplifier.
The module includes RF input, interstage, and output matching elements.
oThe source and load impedances required for optimum operation of the
.cmodule are much higher (and simpler to realize) than for unmatched Si
LDMOS transistors of similar performance.
Package Type: Surface Mount
PN: PFM18030SM
UThe surface mount package base is typically soldered to a conventional
PCB pad with an array of via holes for grounding and thermal sinking of
t4the module. Optimized internal construction supports low FET channel
etemperature for reliable operation.
Package Type: Flange
e PN: PFM18030F
h• 29 dB Gain
S• 30 Watts Peak Output Power
ta• Internal Tracking FETs
(for improved bias control)
• IS95 CDMA Performance
5 Watts Average Output Level
20% Power Added Efficiency
–49 dBc ACPR
w.DaGate1
RF IN Lead
Module Schematic Diagram
Module Substrate
Q1 Die Carrier
Q1
Input
Match
Output
Match
Q2 Die Carrier
Q2
Input
Match
Output
Match
Drain 2
RF OUT
Lead
ww .comSense S1 Lead
UGate 2 Lead
et4Sense S2 Lead
heD1 Lead
S1
S2
ataSNote: Additionally, there are 250 KOhm resistors connected in shunt with all leads, to enhance ESD protection.
.DPage 1 of 13 Specifications subject to change without notice. U.S. Patent No. 6,822,321
wwwhttp://www.cree.com/
Rev. 2
1 page  
PFM18030
PFM18030SM Package Outline
PFM18030F Package Outline
Page 5 of 13 Specifications subject to change without notice. U.S. Patent No. 6,822,321
http://www.cree.com/
Rev. 2
5 Page 
PFM18030
similar bias conditions for Sense and RF FETs. The disadvantage of this design is its relative complexity and
the incorporation of operational amplifiers, for which stability is potentially circuit layout dependent.
Parts List for Cree Microwave Test Fixture
Designator
C2
C3
C5
C4
C6
C1, C7, C19, C20
C10, C13, C14, C15,
C8, C11, C16, C21
C22
C9, C23, C17, C12
C18, C24, C25, C26,
C31, C34
C27, C37
C28
C33, C35
C32, C36
C40, C41, C42, C43
R1
R2
R11, R12
R31, R32
R13, R14, R33, R34
R16, R15, R35, R36
R19, R39
R18
R38
R20, R40
R17, R37
RZ_FS1, RZ_FS2
D1, D2
S1, S2
U1, U2
Description
CAP, 1.8 PF±0.1 pF, 0603, ATC 600S
CAP, 2.0 PF±0.1 pF, 0603, ATC 600S
CAP, 2.4 PF±0.1 pF, 0603, ATC 600S
CAP, 4.7 PF±0.1 pF, 0603, ATC 600S
CAP, 4.7 PF±0.1 pF, 0603, ATC 600S
CAP, 27 PF±5%, 0603, ATC 600S
CAP, 27 PF±5%, 100V (min), 0603, any vendor.
CAP, 470 PF ±10%,100 V, 0603, any vendor.
CAP, 3300 PF±10%, 100 V, 0603, Murata GRM39X7R332K100
CAP, 15000 PF±10%, 100 V, 0805, MurataGRM40X7R153K100
CAP, 150000 1206, 50V, X7R, 10%
Murata GRM42-6-X7R-154-K-050-A-L
CAP, 2.2uf SMT TANTALUM, 50V
CAP, 47UF, 50V, ELECTR SMT
CAP, 18,000 PF ±10%,100 V, 0603
CAP, 33,000 PF ±10%,100 V, 0603
CAP, 1000 PF ±10%,100 V, 0603.
RES, 1/16W, 0603, 1000 ohms, 5%
Not used
RES, 1/16W, 0603, 332 Ohms, 1%
RES, 1/16W, 0603, 147 Ohms, 1%
RES, 1/16W, 0603, 2370 Ohms, 1%
RES, 1/16W, 0603, 511 KOhms, 1%
RES, 1/16W, 0603, 100 KOhms, 5%
RES, 1/16W, 0603, 3320 Ohms, 5%
RES, 1/16W, 0603, 2000 Ohms, 5%
RES, 1/8W, 1206, 1000 Ohms, 5%
RES, potentiometer, 10 Kohms, Digikey SM4W103-ND, 11T
RES, 1/16W, 0805, 0 Ohms (used as jumpers, demo fixture only)
Zener diode, 6.2 V, Digikey PN BZT52C6V27DICT-ND
SPST Switch, Digikey PN CKN1100CT-ND
Op Amp, High Output, LM8261M5 (5 pin, SOT23 package)
Qty
1
1
1
1
1
4
4
4
1
4
6
2
1
2
2
4
1
0
2
2
4
4
2
1
1
2
2
2
2
2
2
It is also possible to bias the two stages in a conventional manner, with the two tracking FET drains left
unused (floating or grounded). The bias circuits presented in this applications note are just two of several
possibilities.
Page 11 of 13 Specifications subject to change without notice. U.S. Patent No. 6,822,321
http://www.cree.com/
Rev. 2
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet PFM18030.PDF ] | |
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