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PDF 2SK3889-01L Data sheet ( Hoja de datos )
| Número de pieza | 2SK3889-01L | |
| Descripción | (2SK3889-01L/S/SJ) Power MOSFET / Super FAP-G Series | |
| Fabricantes | Fuji Semiconductors | |
| Logotipo |  |
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2SK3889-01Lom,S,SJN-CHANNEL SILICON POWER MOSFET
t4U.cFUJI POWER MOSFET
SupertaFSAhePe-G SeriesFeatures
aHigh speed switching
.DNo secondary breakdown
wAvalanche-proof
wwApplications
Low on-resistance
Low driving power
Outline Drawings (mm) 200406
See to P4
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
mMaximum ratings and characteristic
oAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
.cItem
Symbol
Ratings
Drain-source voltage
VDS
600
VDSX
600
UContinuous Drain Current
ID
9
Pulsed Drain Current
ID(puls]
±36
t4Gate-Source Voltage VGS ±30
Maximum Avalanche current
IAR
9
eNon-Repetitive
EAS 462.3
Maximum Avalanche Energy
eRepetitive
EAR 16.5
Maximum Avalanche Energy
hMaximum Drain-Source dV/dt
dVDS/dt
20
Peak Diode Recovery dV/dt
dV/dt
5
SMax. Power Dissipation
PD
165
ta1.67
Operating and Storage
Tch
+150
Temperature range
Tstg -55 to +150
Unit
V
V
A
A
V
A
mJ
Remarks
VGS=-30V
Note *1
Note *2
mJ Note *3
kV/µs
kV/µs
W
°C
°C
VDS=< 600V
Note *4
Tc=25°C
Ta=25°C
aElectrical characteristics (Tc =25°C unless otherwise specified)
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Note *1:Tch<= 150°C,Repetitive and Non-repetitive
Note *2:StartingTch=25°C,IAS=3.6A,L=65.4mH,
VCC=60V,RG=50Ω
EAS limited by maximum channel temperature
and Avalanche current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Thermal impedance’
graph.
Note *4:IF<= -ID, -di/dt=50A/µs,VCC<= BVDSS,Tch<=150°C
.DItem
Drain-Source Breakdown Voltage
Gate Threshold Voltage
wZero Gate Voltage Drain Current
Gate-Source Leakage Current
wDrain-Source On-State Resistance
wForward Transconductance
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Test Conditions
ID= 250µA
ID= 250µA
VGS=0V
VDS=VGS
VDS=600V VGS=0V
VDS=480V VGS=0V
VGS=±30V VDS=0V
ID=4.5A VGS=10V
ID=4.5A VDS=25V
Tch=25°C
Tch=125°C
Min. Typ.
600
3.0
0.82
4.5 9.0
Max. Units
V
5.0 V
25 µA
250
100 nA
1.00 Ω
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time ton
Turn-Off Time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Thermal characteristics
Item
Thermal resistance
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Symbol
Rth(ch-c)
Rth(ch-a)
VDS=25V
VGS=0V
f=1MH
VCC=300V ID=4.5A
VGS=10V
RGS=10 Ω
VCC=300V
ID=9A
VGS=10V
IF=9A VGS=0V Tch=25°C
IF=9A VGS=0V
-di/dt=100A/µs Tch=25°C
Test Conditions
channel to case
channel to ambient
950
m130
o6.0
.c16
6.0
U33
t45.5
e25
e10
h8.0
S1.10
ta860
a 7.0
1425
195
9.0
24
9.0
50
8.3
38
15
12.0
1.50
pF
ns
nC
V
ns
µC
www.DMin. Typ.
Max. Units
0.758 °C/W
75 °C/W
www.fujielectric.co.jp/fdt/scd
1
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| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SK3889-01L.PDF ] | |
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