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Número de pieza | STP4NB30 | |
Descripción | N-CHANNEL MOSFET | |
Fabricantes | ST Microelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STP4NB30 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! STP4NB30
STP4NB30FP
N-CHANNEL 300V - 1.8Ω - 4A - TO-220/TO-220FP
PowerMesh™ MOSFET
TYPE
VDSS
RDS(on)
ID
STP4NB30
STP4NB30FP
300 V
300 V
<2Ω
<2Ω
4A
4A
s TYPICAL RDS(on) = 1.8 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR TELECOM,
INDUSTRIAL AND CONSUMER
ENVIRONMENT
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (1) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt
Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
May 2001
Value
STP4NB30 STP4NB30FP
Unit
300 V
300 V
±30 V
4 4 (*) A
2.5
2.5 (*)
A
16
16 (*)
A
70 30 W
0.56
4
0.24
W/°C
V/ns
-
2000
V
–65 to 150
°C
150 °C
(1)ISD ≤4 A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(*) Limited only by Maximum Temperature Allowed
1/9
1 page Gate Charge vs Gate-source Voltage
STP4NB30/STP4NB30FP
Capacitance Variations
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet STP4NB30.PDF ] |
Número de pieza | Descripción | Fabricantes |
STP4NB30 | N-CHANNEL MOSFET | ST Microelectronics |
STP4NB30FP | N-CHANNEL MOSFET | ST Microelectronics |
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