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Número de pieza | SG531 | |
Descripción | SG615 | |
Fabricantes | EPSON Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SG531 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Crystal oscillator
SOJ HIGH-FREQUENCY CRYSTAL OSCILLATOR
SG-615 series
• High-density mounting-type SMD.
• A general-purpose SMD with heat-resisting cylindrical AT-cut
crystal unit and allowing almost the same soldering temperature
as SMD IC.
• Cylindrical AT crystal unit builtin, thus assuring high reliability.
• Provided with output enable function.
• Low current consumption.
www.DataSheet4U.cSopmecifications (characteristics)
Item
Symbol
SG-615P
SG-615PTJ
Specifications
SG-615PH
Remarks
Output frequency range
f0 1.0250 MHz to 26.0000 MHz
26.0001 MHz to 66.6667 MHz
Power source
voltage
Temperature
range
Max. supply voltage
Operating voltage
Storage temperature
Operating temperature
Soldering condition
VDD-GND
VDD
TSTG
TOPR
TSOL
Frequency stability
Current consumption
Duty
C-MOS level
TTL level
Output voltage
Output load
condition (fan out)
C-MOS
TTL
Output enable/disable input voltage
Output disable current
Output rise time C-MOS level
TTL level
Output fall time C-MOS level
TTL level
∆f/f0
Iop
tw/t
VOH
(IOH)
VOL
(IOL)
CL
N
VIH
VIL
IOE
tTLH
tTHL
-0.3 V to +7.0 V
5.0 V±0.5 V
-55 °C to +125 °C
-20 °C to 70 °C (-40 °C to 85 °C)
Twice at under 260 °C within 10 s
or under 230 °C within 3 min.
B: ±50 x 10-6
C: ±100 x 10-6
23 mA Max.
35 mA Max.
40 % to 60 %
— 40 % to 60 %
45 % to 55 %
—
VDD -0.4 V Min.
2.4 V Min.
VDD -0.4 V Min.
-400 µA
-4 mA
0.4 V Max.
16 mA
8 mA
4 mA
50 pF Max.
— 50 pF Max.
10 TTL Max.
5 TTL Max.
—
2.0 V Min.
3.5 V Min.
2.0 V Min.
0.8 V Max.
1.5 V Max.
0.8 V Max.
12 mA Max.
8 ns Max.
28 mA Max.
—
5 ns Max.
—
20 mA Max.
7 ns Max.
—
7 ns Max.
5 ns Max.
—
Stored as bare product after unpacking
55 MHz Max.(-40 °C to +85 °C)
B type is possible up to 55 MHz
No load condition
C-MOS load: 1/2VDD
TTL load: 1.4 V
CL<_15 pF
IIH=1 µA Max.(OE=VDD)
IIL=-100 µA Min.(OE=GND) IIL=-500 µA Min.(OE=GND) PTJ
OE=GND
C-MOS load: 20 %→80 % VDD
TTL load: 0.4 V→2.4 V
C-MOS load: 80 %→20 % VDD
TTL load: 2.4 V→0.4 V
Oscillation start up time
Aging
Shock resistance
tOSC 4 ms Max.
10 ms Max.
fa ±5 x 10-6/year Max.
S.R.
±20 x 10-6 Max.
Time at 4.5 V to be 0 s
Ta= +25 °C, VDD = 5 V, first year
Three drops on a hard board from 750 mm
or excitation test with 29400 m/s2 x 0.3 ms x
1/2sine wave in 3 directions
Note: • Unless otherwise stated, characteristics (specifications) shown in the above table are based on the rated operating temperature and voltage condition.
• External by-pass capacitor is recommended.
External dimensions
(Unit: mm)
Recommended soldering pattern
(Unit: mm)
#4 #3
SG-615P C
20.0000M
mE 9352A
.co#1 #2
14.0 Max.
heet4u5.08 0.51
www.datas33
NO. Pin terminal
1 OE
2 GND
3 OUT
4 VDD
7.62
1.3 3.8
1.3
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet SG531.PDF ] |
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