PDF MRF134 Data sheet ( Hoja de datos )

Número de pieza	MRF134
Descripción	N-CHANNEL MOS BROADBAND RF POWER FET
Fabricantes	Motorola Semiconductors
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No Preview Available ! MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance Output Power = 5.0 Watts Minimum Gain = 11 dB Efficiency — 55% (Typical) • Small–Signal and Large–Signal Characterization • Typical Performance at 400 MHz, 28 Vdc, 5.0 W Output = 10.6 dB Gain • 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR • Low Noise Figure — 2.0 dB (Typ) at 200 mA, 150 MHz • Excellent Thermal Stability, Ideally Suited For Class A Operation D Order this document by MRF134/D MRF134 5.0 W, to 400 MHz N–CHANNEL MOS BROADBAND RF POWER FET G S CASE 211–07, STYLE 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) VDSS VDGR 65 65 Vdc Vdc Gate–Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C VGS ID PD ± 40 Vdc 0.9 Adc 17.5 Watts 0.1 W/°C Storage Temperature Range Tstg – 65 to +150 °C THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal Resistance, Junction to Case RθJC 10 °C/W Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 6 ©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA MRF134 1 1 page R3* C7 C1 RF INPUT Z1 C2 D1 R2 C8 L2 R4 C11 C9 + C12 C10 – L1 Z4 R1 Z2 Z3 DUT C3 VDD = 28 V C13 C14 Z5 C6 RF OUTPUT C4 C5 Bias Adjust C1, C6 — 270 pF, ATC 100 mils C2, C3, C4, C5 — 0–20 pF Johanson C7, C9, C10, C14 — 0.1 µF Erie Redcap, 50 V C8 — 0.001 µF C11 — 10 µF, 50 V C12, C13 — 680 pF Feedthru D1 — 1N5925A Motorola Zener L1 — 6 Turns, 1/4″ ID, #20 AWG Enamel L2 — Ferroxcube VK–200 — 19/4B R1 — 68 Ω, 1.0 W Thin Film R2 — 10 kΩ, 1/4 W R3 — 10 Turns, 10 kΩ Beckman Instruments 8108 R4 — 1.8 kΩ, 1/2 W Z1 — 1.4″ x 0.166″ Microstrip Z2 — 1.1″ x 0.166″ Microstrip Z3 — 0.95″ x 0.166″ Microstrip Z4 — 2.2″ x 0.166″ Microstrip Z5 — 0.85″ x 0.166″ Microstrip Board — Glass Teflon, 62 mils Figure 14. 400 MHz Test Circuit 400 400 225 225 Zin{ 150 f = 100 MHz 150 ZOL f = 100 MHz Zo = 50 Ω VDD = 28 V, IDQ = 50 mA, Pout = 5.0 W f Zin{ MHz Ohms ZOL* Ohms 100 21.2 – j25.4 20.1 – j46.7 150 14.6 – j22.1 19.2 – j38.2 225 9.1 – j18.8 17.5 – j33.5 400 6.4 – j10.8 16.9 – j26.9 {68 Ω Shunt Resistor Gate–to–Ground ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device output operates at a ZOL* = given output power, voltage and frequency. Figure 15. Large–Signal Series Equivalent Input/Output Impedances, Zin†, ZOL* MOTOROLA RF DEVICE DATA MRF134 5 5 Page

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