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PDF SW2N60 Data sheet ( Hoja de datos )
| Número de pieza | SW2N60 | |
| Descripción | This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN | |
| Fabricantes | Samwin | |
| Logotipo |  |
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SAMWIN
SW2N60
Features
zN-Channel MOSFET
zBVDSS (Minimum)
zRDS(ON) (Maximum)
zID
zQg (Typical)
zPD (@TC=25 ℃)
: 600 V
: 5.0 ohm
: 2.0 A
: 16 nc
: 50 W
General Description
This power MOSFET is produced in CHMC with
advanced VDMOS technology of SAMWIN. This
technology enable power MOSFET to have better
characteristics, such as fast switching time, low on
resistance, low gate charge and especially excellent
avalanche characteristics. This power MOSFET is
usually used at high efficient DC to DC converter
block and SMPS. It’s typical application is TV and
monitor.
D
TO-252
TO-220
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain to Source Voltage
Continuous Drain Current (@Tc=25℃)
Continuous Drain Current (@Tc=100℃)
IDM
VGS
EAS
EAR
dv/dt
PD
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (@Tc=25℃)
Derating Factor above 25℃
(Note 1)
(Note 2)
(Note 1)
(Note 3)
TSTG,TJ
TL
Operating junction temperature &Storage temperature
Maximum Lead Temperature for soldering purpose, 1/8 from
Case for 5 seconds.
Thermal Characteristics
Value
TO-220
TO-251(2)
600
2.0 1.8
1.67
1.47
8.0 7.2
±30
110
5.0 4.2
5.0
50 42
0.4 0.34
-55~+150
300
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/℃
℃
℃
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case Max
Thermal Resistance, Case-to-Sink
TYP.
Thermal Resistance, Junction-to-Ambient Max
Value
TO-220
TO-251(2)
2.4 2.9
0.5
62.5
Units
℃/ W
℃/ W
℃/ W
REV0.2
1/6
04.11.1
1 page  
SAMWIN
SW2N60
50KΩ
200nF
300nF
VGS
1mA
Same Type
as DUT
VGS
10V
VDS
Qgs
Qg
Qgd
DUT
Charge
VDS
10V
Pulse
Generator
RG
Fig 12. Gate Charge test Circuit & Waveforms
RL
VDD
VDS
(0.5 rated VDS)
90%
DUT
Vin
10%
td(on) tr
ton
Fig 13. Switching test Circuit & Waveforms
tf
td(off)
toff
VDS
RG
10V
L
VDD
EAS=
1
---
2
LLIAS2------B--V--D--S-S--
BVDSS-VDD
DUT
BVDSS
IAS
VDD
ID(t)
VDS(t)
tp Time
Fig 14. Unclamped Inductive Switching test Circuit & Waveforms
REV0.2
5/6
04.11.1
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SW2N60.PDF ] | |
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