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PDF IXFH13N80Q Data sheet ( Hoja de datos )
| Número de pieza | IXFH13N80Q | |
| Descripción | HiPerFET Power MOSFETs Q Class | |
| Fabricantes | IXYS Corporation | |
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HiPerFETTM
Power MOSFETs
Q Class
N-Channel Enhancement Mode
Avalanche Rated High dv/dt, Low Qg
IXFH 13N80Q
IXFT 13N80Q
VDSS
ID25
RDS(on)
=
=
=
trr £ 250 ns
800 V
13 A
0.70 W
Preliminary data sheet
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
P
D
TJ
TJM
Tstg
TL
M
d
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
I
S
£
I,
DM
di/dt
£
100
A/ms,
V
DD
£
V,
DSS
TJ £ 150°C, RG = 2 W
T
C
= 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247
TO-268
Maximum Ratings
800 V
800 V
±20 V
±30 V
13 A
52 A
13 A
28 mJ
750 mJ
5 V/ns
250
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
6g
4g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 mA
VGS(th)
VDS = VGS, ID = 4 mA
IGSS VGS = ±20 VDC, VDS = 0
I
DSS
V =V
DS DSS
V =0V
GS
T=
J
25°C
T
J
=
125°C
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
Characteristic Values
Min. Typ. Max.
800 V
2.5 4.5 V
±100 nA
50 mA
1 mA
0.70 W
TO-268 (D3) (IXFT) Case Style
G
S
TO-247 AD (IXFH)
(TAB)
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
• IXYS advanced low Qg process
• International standard packages
• Low RDS (on)
• Unclamped Inductive Switching (UIS)
rated
• Fast switching
• Molding epoxies meet UL94V-0
flammability classification
Advantages
• Easy to mount
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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