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PDF SUP75N03-04 Data sheet ( Hoja de datos )
| Número de pieza | SUP75N03-04 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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SUP/SUB75N03-04
Vishay Siliconix
N-Channel 30-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (W)
30 0.004
ID (A)
75a
TO-220AB
TO-263
D
DRAIN connected to TAB
GD S
Top View
SUP75N03-04
G DS
Top View
SUB75N03-04
DRAIN connected to TAB
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Gate-Source Voltage
Continuous Drain Current
(TJ = 175_C)
Pulsed Drain Current
TC = 25_C
TC = 125_C
Continuous Source Current (Diode Conduction)
Avalanche Current
Avalanche Energy
L = 0.1 mH
Repetitive Avalanche Energyb
L = 0.05 mH
Maximum Power Dissipation
TC = 25_C (TO-220AB and TO-263)
TA = 25_C (TO-263)d
Operating Junction and Storage Temperature Range
Lead Temperature
(1/16” from case for 10 sec.)
TO-220AB
VGS
ID
IDM
IS
IAR
EAS
EAR
PD
TJ, Tstg
TL
"20
75a
75a
250
75
75
280
140
187c
3.7
–55 to 175
300
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Junction-to-Ambient
Junction-to-Case
PCB Mount (TO-263)d
Free Air (TO-220AB)
RthJA
RthJC
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70745
S-04137—Rev. E, 18-Jun-01
Limit
40
62.5
0.6
Unit
_C/W
www.vishay.com
2-1
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| PDF Descargar | [ Datasheet SUP75N03-04.PDF ] | |
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