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PDF STP80NS04Z Data sheet ( Hoja de datos )
| Número de pieza | STP80NS04Z | |
| Descripción | N - CHANNEL POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de STP80NS04Z (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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® STP80NS04Z
N - CHANNEL CLAMPED 7.5mΩ - 80A - TO-220
FULLY PROTECTED MESH OVERLAY™ MOSFET
TYPE
V DSS
RDS(on)
ID
STP80NS04Z
CLAMPED <0.008 Ω 80 A
s TYPICAL RDS(on) = 0.0075 Ω
s 100% AVALANCHE TESTED
s LOW CAPACITANCE AND GATE CHARGE
s 175 oC MAXIMUM JUNCTION
TEMPERATURE
DESCRIPTION
This fully clamped Mosfet is produced by using
the latest advanced Company’s Mesh Overlay
process which is based on a novel strip layout.
The inherent benefits of the new technology
coupled with the extra clamping capabilities make
this product particularly suitable for the harshest
operation conditions such as those encountered
in the automotive environment. Any other
application requiring extra ruggedness is also
recommended.
APPLICATIONS
s ABS, SOLENOID DRIVERS
s MOTOR CONTROL
s DC-DC CONVERTERS
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
Va l u e
Un it
V DS
VDG
VGS
ID
ID
IDG
IGS
IDM (•)
Ptot
Drain-source Voltage (VGS = 0)
Drain- gate Voltage
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Gate Current (continuous)
G ate Source Current (continuous)
Drain Current (pulsed)
T otal Dissipation at Tc = 25 oC
Derating Factor
C LA M P E D
C LA M P E D
C LA M P E D
80
60
± 50
± 50
320
160
1.06
V
V
V
A
A
mA
mA
A
W
W /o C
VESD(G-S) Gate-Source ESD (HBM - C= 100pF, R=1.5 kΩ)
2
VESD(G-D) G ate-Drain ESD (HBM - C= 100pF, R=1.5 kΩ)
4
VESD(D-S) Drain-Source ESD (HBM - C= 100pF, R=1.5 kΩ)
4
Ts tg Storage Temperature
-65 to 175
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
-40 to 175
( 1) ISD ≤ 80 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
December 1999
kV
kV
kV
oC
oC
1/8
1 page  
Normalized Gate Threshold Voltage vs
Temperature
STP80NS04Z
Normalized On Resistance vs Temperature
Zero Gate Voltage Drain Current vs
Temperature
Source-drain Diode Forward Characteristics
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STP80NS04Z.PDF ] | |
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