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PDF STH15NB50 Data sheet ( Hoja de datos )
| Número de pieza | STH15NB50 | |
| Descripción | N-CHANNEL Power MOS MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de STH15NB50 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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STW15NB50
® STH15NB50FI
N-CHANNEL 500V - 0.33Ω - 14.6A -
T0-247/ISOWATT218 PowerMESH™ MOSFET
TYPE
ST W15NB50
ST H15NB50FI
VDSS
500 V
500 V
RDS(on)
< 0.36 Ω
< 0.36 Ω
ID
14.6 A
10.5 A
s TYPICAL RDS(on) = 0.33 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
ID
ID
IDM ( •)
Ptot
dv/dt(1)
VISO
Tstg
Tj
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
June 1998
3
2
1
TO-247
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
Value
STW15NB50 STH15NB50FI
500
500
± 30
14.6
10.5
9.2 6.6
58.4
58.4
190 80
0.64
1.52
4
4000
-65 to 150
150
Uni t
V
V
V
A
A
A
W
W/oC
V/ ns
V
oC
oC
1/9
1 page  
Gate Charge vs Gate-source Voltage
STW15NB50 - STH15NB50FI
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet STH15NB50.PDF ] | |
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