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PDF STD2NB50 Data sheet ( Hoja de datos )
| Número de pieza | STD2NB50 | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STD2NB50
STD2NB50-1
N-CHANNEL 500V - 5Ω - 1A DPAK / IPAK
PowerMesh™ MOSFET
TYPE
VDSS
RDS(on)
ID
STD2NB50
STD2NB50-1
500V
500V
< 6Ω
< 6Ω
1A
1A
s TYPICAL RDS(on) = 5 Ω
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
3
1
DPAK
3
2
1
IPAK
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
s SWITH MODE POWER SUPPLIES (SMPS)
s LIGHTING FOR INDUSTRIAL AND CONSUMER
ENVIRONMENT
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
September 2001
Value
500
500
± 30
1
0.63
4
40
0.32
3.5
–65 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
(1)ISD ≤1A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
1/10
1 page  
Normalized Gate Threshold Voltage vs
Temperature
STD2NB50/STD2NB50-1
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet STD2NB50.PDF ] | |
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