|
|
Datasheet SPN01N60C3-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
SPN Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | SPN01N60C3 | Cool MOS Power Transistor Rev. 2.1
SPN01N60C3
VDS @ Tjmax RDS(on) ID 650 6 0.3
SOT-223
4
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance
V Ω A
3 2 1
VPS05163
Type
Pac  Infineon transistor | | |
| 2 | SPN01N60S5 | Cool MOS Power-Transistor
Preliminary data
SPN01N60S5
Cool MOS
Power-Transistor
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated Optimized capacitances Improved noise immunity
C O OLMO S
Power Semiconductors
Product Summary VDS @ Tjmax RDS(on) ID
SOT-223
ì
650 6  Infineon Technologies transistor | | |
| 3 | SPN02N60C3 | Power Transistor Rev. 2.1
SPN02N60C3
VDS @ Tjmax RDS(on) ID 650 3 0.4
SOT223
4
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated
• Ultra
V Ω A
low effective capacitances
3 2 1
VPS05163
Type SPN02N60C3
Pa Infineon Technologies transistor | | |
| 4 | SPN02N60S5 | Power Transistor SPN02N60S5 Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated
• Ultra
VDS RDS(on) ID
600 3 0.4
SOT-223
4
V Ω A
low effective capacitances
• Improved transconductance
2 1
3
VPS05163
Typ Infineon Technologies transistor | | |
| 5 | SPN03N60C3 | Cool MOS Power Transistor Rev. 2.0
SPN03N60C3
VDS @ Tjmax RDS(on) ID 650 1.4 0.7
SOT-223
4
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated • Ultra low effective capacitances
V Ω A
3 2 1
VPS05163
Type
Package
Ordering Code
SPN03N6 Infineon Technologies transistor | | |
| 6 | SPN03N60S5 | Cool MOS Power Transistor SPN03N60S5 Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance
2 1
VPS05163
VDS RDS(on) ID
600 1.4 0.7
SOT-223
4
V Ω A
3
Type SPN03N60S5
Package Infineon Technologies transistor | | |
| 7 | SPN04N60C2 | Cool MOS Power Transistor Final data
SPN04N60C2
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology
• Worldwide best RDS(on) in SOT 223
Product Summary VDS RDS(on) ID 600 0.95 0.8
SOT-223
4
V Ω A
• Ultra low gate charge • Extreme dv/dt rated • Ultra low effective capacitances • Infineon transistor | |
| Esta página es del resultado de búsqueda del SPN01N60C3-PDF.HTML. Si pulsa el resultado de búsqueda de SPN01N60C3-PDF.HTML se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |