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PDF SPD30N03S2L-07 Data sheet ( Hoja de datos )
| Número de pieza | SPD30N03S2L-07 | |
| Descripción | OptiMOS Power-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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OptiMOS® Power-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic Level
• Excellent Gate Charge x RDS(on) product (FOM)
• Superior thermal resistance
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
SPD30N03S2L-07
Product Summary
VDS 30 V
RDS(on) 6.7 mΩ
ID 30 A
P- TO252 -3-11
Type
Package
Ordering Code Marking
SPD30N03S2L-07 P- TO252 -3-11 Q67042-S4091 2N03L07
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
ID
TC=25°C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=30 A , VDD=25V, RGS=25Ω
Repetitive avalanche energy, limited by Tjmax2)
Reverse diode dv/dt
IS=30A, VDS=24V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage
Power dissipation
TC=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ID puls
EAS
EAR
dv/dt
VGS
Ptot
Tj , Tstg
Value
30
30
120
250
13
6
±20
136
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2003-05-09
1 page  
SPD30N03S2L-07
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
SPD30N03S2L-07
75 Ptot = 136W
A
ih g
60
55
50
45
40
35
30
25
VGS [V]
a 2.6
f b 2.8
c 3.0
d 3.2
e 3.4
ef
g
3.6
3.8
h 4.5
i 10.0
d
20
c
15
10 b
5a
0
0 0.5 1 1.5 2 2.5 3 3.5 4 V 5
VDS
7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 80 µs
60
A
50
45
40
35
30
25
20
15
10
5
0
0 0.5 1 1.5 2 2.5 3 V 4
VGS
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
SPD30N03S2L-07
24
Ω
20 d e f
18
16
14
12 g
10
8h
6
4
VGS [V] =
2de f
3.2 3.4 3.6
g hi
3.8 4.5 10.0
0
0 10 20 30
40
i
50 A 65
ID
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: gfs
90
S
70
60
50
40
30
20
10
0
0 20 40 60 80 100 A 130
ID
Page 5
2003-05-09
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SPD30N03S2L-07.PDF ] | |
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