DataSheet.es    


PDF SPB21N50C3 Data sheet ( Hoja de datos )

Número de pieza SPB21N50C3
Descripción Cool MOS Power Transistor
Fabricantes Infineon Technologies 
Logotipo Infineon Technologies Logotipo



Hay una vista previa y un enlace de descarga de SPB21N50C3 (archivo pdf) en la parte inferior de esta página.


Total 13 Páginas

No Preview Available ! SPB21N50C3 Hoja de datos, Descripción, Manual

Final data
SPP21N50C3, SPB21N50C3
SPI21N50C3, SPA21N50C3
Cool MOS™ Power Transistor
Feature
New revolutionary high voltage technology
Worldwide best RDS(on) in TO 220
VDS @ Tjmax
RDS(on)
ID
560
0.19
21
V
A
Ultra low gate charge
P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1
Periodic avalanche rated
Extreme dv/dt rated
Ultra low effective capacitances P-TO220-3-31
1 23
Improved transconductance
P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type
SPP21N50C3
SPB21N50C3
SPI21N50C3
SPA21N50C3
Package
Ordering Code
P-TO220-3-1 Q67040-S4565
P-TO263-3-2 Q67040-S4566
P-TO262-3-1 Q67040-S4564
P-TO220-3-31 Q67040-S4585
Marking
21N50C3
21N50C3
21N50C3
21N50C3
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=10A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=21A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
Symbol
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
Value
SPSP_PB__BI SPA
21
13.1
63
690
211)
13.11)
63
690
11
21 21
±20 ±20
±30 ±30
208 34.5
-55...+150
Unit
A
A
mJ
A
V
W
°C
Page 1
2003-07-02

1 page




SPB21N50C3 pdf
1 Power dissipation
Ptot = f (TC)
Final data
SPP21N50C3, SPB21N50C3
SPI21N50C3, SPA21N50C3
2 Power dissipation FullPAK
Ptot = f (TC)
240 SPP21N50C3
W
200
180
160
140
120
100
80
60
40
20
00 20 40 60 80 100 120 °C 160
TC
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC=25°C
10 2
A
35
W
25
20
15
10
5
00 20 40 60 80 100 120 °C 160
TC
4 Safe operating area FullPAK
ID = f (VDS)
parameter: D = 0, TC = 25°C
10 2
A
10 1
10 1
10 0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
10 -1
tp = 1 ms
tp = 10 ms
DC
10
-2
10
0
10 1
10 0
tp = 0.001 ms
tp = 0.01 ms
10 -1
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
10 2 V 10 3
VDS
10
-2
10
0
Page 5
10 1
10 2 V 10 3
VDS
2003-07-02

5 Page





SPB21N50C3 arduino
P-TO-220-3-1
10 ±0.4
3.7 ±0.2
A
Final data
SPP21N50C3, SPB21N50C3
SPI21N50C3, SPA21N50C3
B
1.27±0.13
4.44
0.05
C
2x 2.54
3x
0.75 ±0.1
1.17 ±0.22
0.25 M A B C
All metal surfaces tin plated, except area of cut.
Metal surface min. x=7.25, y=12.3
P-TO-263-3-2 (D2-PAK)
0.5 ±0.1
2.51±0.2
Page 11
2003-07-02

11 Page







PáginasTotal 13 Páginas
PDF Descargar[ Datasheet SPB21N50C3.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
SPB21N50C3Cool MOS Power TransistorInfineon Technologies
Infineon Technologies

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar