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Número de pieza | MSC1157 | |
Descripción | Speaker Drive Amplifier | |
Fabricantes | OKI electronic | |
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¡¡SemicondSucetormiconductor
MSC1157
Speaker Drive Amplifier
This version: FMebS. C19191957
Previous version: May. 1997
GENERAL DESCRIPTION
The MSC1157, designed specifically to operate at a low voltage with low current consumption,
is a power amplifier developed for driving a speaker for a voice IC.
The voltage gains can be adjusted over a range of up to ten. The differential output can directly
drive a speaker without any output coupling capacitors. The MSC 1157, because of its ability to
stand by, is ideally suitable for portable equipment applications powered by a battery.
FEATURES
• Low voltage operation
: 2.0 to 6.0 V (Single power supply)
• Low current dissipation
Operating current
: 1.6mA without load (typ.)
• Standby function
: Current dissipation less than 1 mA in standby
• High output current
: 350mA peak
• Differential outputs
: A speaker can be directly connected between
differential outputs.
• Adjustable gain
: Gain can be adjusted by use of an external resistor.
• Package options:
8-pin plastic DIP (DIP8-P-300-2.54) (Product name : MSC1157RS)
8-pin plastic SOP (SOP8-P-250-1.27-K) (Product name : MSC1157MS-K)
Chip
BLOCK DIAGRAM
STBY
SEL
Logic
VCC
VCC
VCC
VR
+
AIN –
20 kW
GND 100 kW
+
–
5 kW
SP
SP
1/13
1 page ¡ Semiconductor
APPLICATION CIRCUIT
MSC1157
+
C4 C3
–
Standby
Select
Input
Standby
Input
Audio
Input
C1
+
C2
–
SEL VCC
STBY
AIN
VR GND
SP
SP
Speaker
• If parasitic capacitance of 60pF or more exists between GND and the speaker output pin SP or
SP, oscillation may occur. Implement the circuit mount design so as to be less than 60pF.
• C1 is the AC coupling capacitor. Cutoff frequency fc on the low frequency side is determined
by the following equation. Choose a value of C1 according to the bandwidth.
1
fc = 2 ¥ p ¥ C1 ¥ 20k
(Hz)
• Choose a value of C2 that is 80 to 100 times as large as that of C1.
• When the standby function is not used, connect the pins STBY and SEL to VCC or GND.
• It is recommended that the capacitor C4 (approximately 0.1mF) having better high frequency
characteristics and the capacitor C3 (approximately 10mF) be placed between the pins VCC and
GND.
5/13
5 Page ¡ Semiconductor
PAD CONFIGURATION
Pad Layout
Chip size
Chip thickness
Pad size (PV aperture)
Substrate potential
Pad location diagram
: X=2.3mm, Y=2.4mm
: 350±30mm
: 110¥110mm
: GND
Y-Axis
2 18
7
MSC1157
X-Axis
36
5
4
Pad Coordinates
(Chip center is located at X=0 and Y=0.)
Pad No.
1
2
3
4
5
6
7
8
Pad Name
VR
AIN
SP
GND
VCC
SP
STBY
SEL
X-AXIS
–133
–985
–950
–180
240
950
985
159
(Unit: µm)
Y-AXIS
1035
1035
–263
–1027
–914
–263
1035
1035
11/13
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet MSC1157.PDF ] |
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