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PDF SFH487P Data sheet ( Hoja de datos )
| Número de pieza | SFH487P | |
| Descripción | GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter 880 nm | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SFH487P (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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GaAIAs-IR-Lumineszenzdiode (880 nm)
GaAIAs Infrared Emitter (880 nm)
SFH 487 P
Area not flat
0.6
0.4
3.1
2.5
2.0
1.7
4.0
3.6
1.8
1.2
29
27
4.5
4.0
Cathode
Approx. weight 0.3 g
3.5
Chip position
0.6
0.4
GEX06308
Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale
q GaAIAs-IR-Lumineszenzdiode, hergestellt
im Schmelzepitaxieverfahren
q Hohe Zuverlässigkeit
q Enge Toleranz: Chipoberfläche/
Bauteiloberkante
q Hohe Impulsbelastbarkeit
q Gute spektrale Anpassung an
Si-Fotoempfänger
q Sehr plane Oberfläche
q Gehäusegleich mit SFH 309
Features
q GaAIAs infrared emitting diode, fabricated in
a liquid phase epitaxy process
q High reliability
q Small tolerance: Chip surface to case
surface
q High pulse handling capability
q Good spectral match to silicon
photodetectors
q Plane surface
q Same package as SFH 309
Anwendungen
q Lichtschranken für Gleich- und
Wechsellichtbetrieb bis 500 kHz
q LWL
Applications
q Photointerrupters
q Fibre optic transmission
Typ
Type
SFH 487 P
Bestellnummer
Ordering Code
Q62703-Q517
Gehäuse
Package
3-mm-LED-Gehäuse, plan, klares violettes Epoxy-
Gieβharz, Anschlüsse im 2.54-mm-Raster (1/10’’),
Anodenkennzeichnung: kürzerer Anschluβ
3 mm LED package (T 1), plane, violet-colored trans-
parent epoxy resin, solder tabs lead spacing 2.54 mm
(1/10’’), anode marking: short lead
Semiconductor Group
1
1997-11-01
1 page  
SFH 487 P
Relative spectral emission
Irel = f (λ)
100
%
Ι rel
80
OHR00877
60
40
20
0
750 800 850 900 950 nm 1000
λ
Forward current, IF = f (VF)
Single pulse, tp = 20 µs
10 1
ΙF A
10 0
OHR00881
10 -1
10 -2
10 -3
0 12 3 4 5 6V 8
VF
Radiant intensity
Ie
Ie 100 mA
=
f
(IF)
Single pulse, tp = 20 µs
10 2
Ιe
Ι e (100mA)
10 1
OHR00878
Max. permissible forward current
IF = f (TA)
125
Ι F mA
100
OHR00880
10 0 75
10 -1 50
10 -2 25
10 -3
10 0 10 1 10 2 10 3 mA 10 4
ΙF
Permissible pulse handling capability
IF = f (τ), TA = 25 oC,
duty cycle D = parameter
104 OHR00886
mA
ΙF
103 0.1
0.2
D = 0.005
0.01
0.02
0.05
0.5
102 DC
D
=
tp
T
tp
ΙF
T
10 1
10
-5
10 -4
10 -3
10 -2
10 -1
10 0
101 s 102
tp
0
0 20 40 60 80 ˚C 100
T
Forward current versus lead length
between the package bottom and the
PC-board IF = f (I), TA = 25 oC
120 OHR00949
mA
Ι F 100
80
60
40
20
0
0 5 10 15 20 25 mm 30
Semiconductor Group
5
1997-11-01
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SFH487P.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SFH487 | GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm | Siemens Semiconductor Group |
| SFH487-2 | GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm | Siemens Semiconductor Group |
| SFH487P | GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter 880 nm | Siemens Semiconductor Group |
| SFH487P-1 | GaAlAs INFRARED EMITTER | Siemens Semiconductor Group |
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