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PDF NTE476 Data sheet ( Hoja de datos )
| Número de pieza | NTE476 | |
| Descripción | Silicon NPN Transistor RF Power Output | |
| Fabricantes | NTE | |
| Logotipo |  |
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NTE476
Silicon NPN Transistor
RF Power Output
Description:
The NTE476 is a silicon epitaxial NPN–planar transistor which employs a multi–emitter electrode de-
sign. This feature together with a heavily diffused base matrix located between the individual emitters
result in high RF current handling capability, high power gain, low base resistance and low output ca-
pacitance. This device is intended for use as a Class A, B or C amplifier and in oscillator and frequency
multiplier circuits.
Features:
D Designed for VHF mobile and marine transmitters
D High efficiency at maximum stability
D Improved metallization to achieve extreme ruggedness
Absolute Maximum Ratings: (TA = +25°C except where specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Continuous Collector Current, ICmax . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Total Dissipation at 25°C Stud, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23.2W
Thermal Resistance, Junction–to–Stud, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.54°C/W
Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to 200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to 200°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Dynamic Characteristics
V(BR)CEO IC = 200mA, IB = 0, Note 1
V(BR)CBO IC = 500µA, IE = 0
V(BR)EBO IE = 2mA, IC = 0
ICBO VCB = 15V, IE = 0
18 – – V
36 – – V
4––V
– – 0.25 mA
Current Gain – Bandwidth Product
Output Capacitance
Functional Tests
fT IC = 100mA, VCE = 13.6V
Cob VCB = 13.6V, IE = 0, f = 100kHz
– 350 – MHz
– – 45 pF
Power Output
Power Gain (Class C)
Collector Efficiency (Class C)
POUT
Pg
η
VCE = 13.6V, f = 175MHz
12 –
4.77 –
80 –
–W
– dB
–%
Note 1. Pulsed thru a 25mH inductor.
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet NTE476.PDF ] | |
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