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PDF MMBT2907AWT1G Data sheet ( Hoja de datos )
| Número de pieza | MMBT2907AWT1G | |
| Descripción | General Purpose Transistor PNP Silicon | |
| Fabricantes | ON | |
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MMBT2907AWT1
Preferred Device
General Purpose Transistor
PNP Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SC−70/SOT−323 package which
is designed for low power surface mount applications.
Features
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
−60
−60
−5.0
−600
Vdc
Vdc
Vdc
mAdc
Characteristic
Symbol Max
Unit
Total Device Dissipation FR− 5 Board
(Note 1) TA = 25°C
Thermal Resistance Junction−to−Ambient
Junction and Storage Temperature
PD
RqJA
TJ, Tstg
150
833
−55 to
+150
mW
°C/W
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SC −70/SOT−323
CASE 419 −04
STYLE 3
MARKING DIAGRAM
20
20 = Specific Device Code
ORDERING INFORMATION
Device
Package
Shipping†
MMBT2907AWT1 SC−70 3000 Tape & Reel
MMBT2907AWT1G SC−70 3000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
April, 2004 − Rev. 3
1
Publication Order Number:
MMBT2907AWT1/D
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MMBT2907AWT1G.PDF ] | |
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