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PDF PHX6ND50E Data sheet ( Hoja de datos )
| Número de pieza | PHX6ND50E | |
| Descripción | PowerMOS transistors FREDFET/ Avalanche energy rated | |
| Fabricantes | NXP Semiconductors | |
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Philips Semiconductors
PowerMOS transistors
FREDFET, Avalanche energy rated
Product specification
PHX6ND50E
FEATURES
• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Isolated package
• Fast reverse recovery diode
SYMBOL
g
d
s
QUICK REFERENCE DATA
VDSS = 500 V
ID = 3.1 A
RDS(ON) ≤ 1.5 Ω
trr = 180 ns
GENERAL DESCRIPTION
N-channel, enhancement mode
field-effect power transistor,
incorporating a Fast Recovery
Epitaxial Diode (FRED). This gives
improved switching performance in
half bridge and full bridge
converters making this device
particularly suitable for inverters,
lighting ballasts and motor control
circuits.
The PHX6ND50E is supplied in the
SOT186A full pack, isolated
package.
PINNING
PIN DESCRIPTION
1 gate
2 drain
3 source
case isolated
SOT186A
case
12 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current1
Total dissipation
Operating junction and
storage temperature range
Tj = 25 ˚C to 150˚C
Tj = 25 ˚C to 150˚C; RGS = 20 kΩ
Ths = 25 ˚C; VGS = 10 V
Ths = 100 ˚C; VGS = 10 V
Ths = 25 ˚C
Ths = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
500
500
± 30
3.1
2
24
35
150
UNIT
V
V
V
A
A
A
W
˚C
August 1998
1
Rev 1.100
1 page  
Philips Semiconductors
PowerMOS transistors
FREDFET, Avalanche energy rated
15 ID, Drain current (Amps)
VDS > ID x RDS(on)max
10
PHP4N50
5
Tj = 150 C
Tj = 25 C
0
02468
VGS, Gate-Source voltage (Volts)
Fig.7. Typical transfer characteristics.
ID = f(VGS); parameter Tj
10
gfs, Transconductance (S)
6
VDS > ID x RDS(on)max
5
Tj = 25 C
4
150 C
PHP4N50
3
2
1
0
0 5 10
ID, Drain current (A)
15
Fig.8. Typical transconductance.
gfs = f(ID); parameter Tj
a
2
Normalised RDS(ON) = f(Tj)
1
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 3 A; VGS = 10 V
Product specification
PHX6ND50E
VGS(TO) / V
4
3
2
max.
typ.
min.
1
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 0.25 mA; VDS = VGS
1E-01 ID / A
SUB-THRESHOLD CONDUCTION
1E-02
1E-03
2 % typ 98 %
1E-04
1E-05
1E-06
01234
VGS / V
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
1000 Junction capacitances (pF)
Ciss
PHP4N50
100
Coss
Crss
10
1 10 100
VDS, Drain-Source voltage (Volts)
1000
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
August 1998
5
Rev 1.100
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet PHX6ND50E.PDF ] | |
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