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PDF PHP10N40E Data sheet ( Hoja de datos )
| Número de pieza | PHP10N40E | |
| Descripción | PowerMOS transistors Avalanche energy rated | |
| Fabricantes | NXP Semiconductors | |
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Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
Product specification
PHP10N60E
FEATURES
• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
SYMBOL
g
d
s
QUICK REFERENCE DATA
VDSS = 600 V
ID = 9.6 A
RDS(ON) ≤ 0.75 Ω
GENERAL DESCRIPTION
N-channel, enhancement mode
field-effect power transistor,
intended for use in off-line switched
mode power supplies, T.V. and
computer monitor power supplies,
d.c. to d.c. converters, motor control
circuits and general purpose
switching applications.
The PHP10N60E is supplied in the
SOT78 (TO220AB) conventional
leaded package.
PINNING
PIN DESCRIPTION
1 gate
2 drain
3 source
case drain
SOT78 (TO220AB)
tab
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
Tj = 25 ˚C to 150˚C
Tj = 25 ˚C to 150˚C; RGS = 20 kΩ
Tmb = 25 ˚C; VGS = 10 V
Tmb = 100 ˚C; VGS = 10 V
Tmb = 25 ˚C
Tmb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
600
600
± 30
9.6
6.1
38
167
150
UNIT
V
V
V
A
A
A
W
˚C
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
EAS
EAR
IAS, IAR
Non-repetitive avalanche
Unclamped inductive load, IAS = 9.4 A;
energy
tp = 0.2 ms; Tj prior to avalanche = 25˚C;
Repetitive avalanche energy1
VDD ≤ 50 V; RGS = 50 Ω; VGS = 10 V
IAR = 9.6 A; tp = 2.5 µs; Tj prior to
avalanche = 25˚C; RGS = 50 Ω; VGS = 10 V
Repetitive and non-repetitive
avalanche current
MIN.
-
-
-
MAX.
731
18
9.6
UNIT
mJ
mJ
A
1 pulse width and repetition rate limited by Tj max.
December 1998
1
Rev 1.000
1 page  
Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
Product specification
PHP10N60E
Gate-source voltage, VGS (V)
15
14 ID = 10A
13
12
Tj = 25 C
11
200V
10
9 100 V
8
7 VDD=480V
6
5
4
3
2
1
0
0 20 40 60 80
Gate charge, QG (nC)
PHP10N60E
100 120
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); parameter VDS
Source-Drain Diode Current, IF (A)
20
PHP10N60E
18
16
14
12
10
8
150 C
Tj = 25 C
6
4
2
0
0 0.2 0.4 0.6 0.8 1 1.2
Drain-Source Voltage, VSDS (V)
Fig.16. Source-Drain diode characteristic.
IF = f(VSDS); parameter Tj
Switching times, td(on), tr, td(off), tf (ns)
500
450 VDD = 300V
RD = 30 Ohms
400
350
300
250
200
150
100
50
0
0 10 20 30
Gate resistance, RG (Ohms)
PHP10N60E
td(off)
tf
tr
td(on)
40 50
Fig.14. Typical switching times; td(on), tr, td(off), tf = f(RG)
Normalised Drain-source breakdown voltage
1.15
V(BR)DSS @ Tj
V(BR)DSS @ 25 C
1.1
1.05
1
0.95
0.9
0.85
-100
-50 0 50 100
Tj, Junction temperature (C)
150
Fig.15. Normalised drain-source breakdown voltage;
V(BR)DSS/V(BR)DSS 25 ˚C = f(Tj)
Non-repetitive Avalanche current, IAS (A)
10
25 C
Tj prior to avalanche = 125 C
1
VDS
ID
0.1
1E-06
tp
PHP10N60E
1E-05
1E-04
1E-03
Avalanche time, tp (s)
1E-02
Fig.17. Maximum permissible non-repetitive
avalanche current (IAS) versus avalanche time (tp);
unclamped inductive load
Maximum Repetitive Avalanche Current, IAR (A)
100
10 Tj prior to avalanche = 25 C
125 C
1
0.1
0.01
1E-06
PHP10N60E
1E-05
1E-04
1E-03
Avalanche time, tp (s)
1E-02
Fig.18. Maximum permissible repetitive avalanche
current (IAR) versus avalanche time (tp)
December 1998
5
Rev 1.000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet PHP10N40E.PDF ] | |
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