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Número de pieza | LS842 | |
Descripción | LOW NOISE LOW DRIFT LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET | |
Fabricantes | Linear Integrated Systems | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de LS842 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! LS840 LS841 LS842
Linear Integrated Systems
LOW NOISE LOW DRIFT
LOW CAPACITANCE
MONOLITHIC DUAL N-CHANNEL JFET
FEATURES
LOW NOISE
LOW LEAKAGE
LOW DRIFT
LOW OFFSET VOLTAGE
en= 8nV/√Hz TYP.
IG = 10pA TYP.
|∆VGS1-2 /∆T|= 5µV/°C max.
IVGS1-2I= 2mV TYP.
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
-65° to +150°C
+150°C
Maximum Voltage and Current for Each Transistor NOTE 1
-VGSS
-VDSO
-IG(f)
Gate Voltage to Drain or Source
Drain to Source Voltage
Gate Forward Current
60V
60V
50mA
Maximum Power Dissipation
Device Dissipation @ Free Air - Total
400mW @ +125°C
D1
G1 3
5 S2
S1
D1 2
6 D2
G1
G2
17
S2 S1 G2
D2
31 X 32 MILS
BOTTOM VIEW
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
LS840 LS841 LS842 UNITS
|∆VGS1-2 /∆T| max. Drift vs. Temperature
5 10 40 µV/°C
|VGS1-2| max.
Offset Voltage
5 10 25 mV
CONDITIONS
VDG= 20V
TA= -55°C to +125°C
VDG= 20V
SYMBOL
BVGSS
BVGGO
Yfss
Yfs
|Yfs1-2/Yfs|
IDSS
|IDSS1-2/IDSS|
VGS(off) or VP
VGS
-IG
-IG
-IG
-IGSS
CHARACTERISTICS
MIN.
Breakdown Voltage
60
Gate-to-Gate Breakdown
60
TRANSCONDUCTANCE
Full Conduction
1000
Typical Conduction
500
Mismatch
--
DRAIN CURRENT
Full Conduction
0.5
Mismatch at Full Conduction --
GATE VOLTAGE
Pinchoff Voltage
1
Operating Range
0.5
GATE CURRENT
Operating
--
High Temperature
--
Reduced VDG
--
At Full Conduction
--
TYP.
--
--
0.6
2
1
2
--
10
--
5
--
MAX.
--
--
UNITS
V
V
CONDITIONS
VDS= 0
IG= 1nA
ID= 1nA
ID= 0
4000
1000
3
µmho
µmho
%
VDG= 20V VGS= 0
VDG= 20V ID= 200µA
5 mA VDG= 20V VGS= 0
5%
4.5 V
4V
50 pA
50 nA
-- pA
100 pA
VDS= 20V ID= 1nA
VDS= 20V ID= 200µA
VDG= 20V
VDG= 20V
VDG= 10V
VDG= 20V
ID= 200µA
ID= 200µA
ID= 200µA
VDS= 0
ID= 200µA
ID= 200µA
IS= 0
f= 1kHz
TA= +125°C
Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet LS842.PDF ] |
Número de pieza | Descripción | Fabricantes |
LS840 | LOW NOISE LOW DRIFT LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET | Linear Integrated Systems |
LS840 | Low Noise | Micross |
LS840-2 | LOW NOISE LOW DRIFT LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET | Linear Integrated Systems |
LS841 | LOW NOISE LOW DRIFT LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET | Linear Integrated Systems |
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