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Número de pieza | PTF10053 | |
Descripción | 12 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor | |
Fabricantes | Ericsson | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PTF10053 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! PTF 10053
12 Watts, 2.0 GHz
GOLDMOS ® Field Effect Transistor
Description
The PTF 10053 is a 12–watt GOLDMOS FET intended for large
signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency
with 12 dB typical gain. Nitride surface passivation and full gold
metallization ensure excellent device lifetime and reliability.
• Guaranteed Performance at 1.99 GHz, 26 V
- Output Power = 12 Watts Min
- Power Gain = 12 dB Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Back Side Common Source
• Excellent Thermal Stability
• 100% Lot Traceability
Typical Output Power & Efficiency vs. Input Power
16
Efficiency
50
14 45
12 40
10
Output Power
8
35
30
6 25
VDD = 26 V
4 20
IDQ = 155 mA
2
f = 2.0 GHz
15
0 10
0.0 0.5 1.0 1.5 2.0
Input Power (Watts)
10053A-1234569911
Package 20244
RF Specifications (100% Tested)
Characteristic
Gain
(VDD = 26 V, POUT = 3 W, IDQ = 155 mA, f = 1.93, 1.99 GHz)
Power Output at 1 dB Compression
(VDD = 26 V, IDQ = 155 mA, f = 1.99 GHz)
Drain Efficiency
(VDD = 26 V, POUT = 12 W, IDQ = 155 mA, f = 1.99 GHz)
Load Mismatch Tolerance
(VDD = 26 V, POUT = 12 W, IDQ = 155 mA, f = 1.99 GHz
—all phase angles at frequency of test)
All published data at TCASE = 25°C unless otherwise indicated.
Symbol Min
Gps
P-1dB
hD
Y
10
12
40
—
Typ
12
—
—
—
Max Units
— dB
— Watts
—%
10:1 —
e
1
1 page e
Test Circuit
PTF 10053
Schematic for f = 1.990 GHz
DUT
PTF 10053
RF Transistor
l1
0.312 l 1.990 GHz
Microstrip 46.6 W
l2
0.161 l 1.990 GHz
Microstrip 46.6 W
l3
0.312 l 1.990 GHz
Microstrip 46.6 W
l4
0.248 l 1.990 GHz
Microstrip 46.6 W
l5
0.118 l 1.990 GHz
Microstrip 9.42 W
l6 0.177 l 1.990 GHz Microstrip 8.92 W
l7 0.129 l 1.990 GHz Microstrip 46.6 W
l8
0.312 l 1.990 GHz
Microstrip 46.6 W
C1 Capacitor, Variable, .3-3.5 pF
JACO JMC5701
C2, C5, C6, C7, C8 Capacitor, 33 pF
100B 330
C3
Capacitor, 0.9 pF
100B R9
C4
Capacitor, 3.0 pF
100B 3R0
C9
C10
C11
J1, J2
L4
L2, L3
L1
R1, R2
Circuit Board
Capacitor, 0.1 µF
Digi-Key
P4525-ND
Capacitor, 1.7 pF
100B 2R0
Capacitor, 10 µF, 35V Digi-Key
PCS6106-ND
Connector, SMA, Female, Panel Mount
Ericsson, #RPM 513 412/53
Ferrite, 6 mm
Phillips 53/3/4.6-452
4 Turns, 22 AWG, .120 DIA I.D.
Inductor, 22 AWG Buss Wire
Resistor, 220 W, 1/4W
Digi-Key 220QBK-ND
TMM4, .030" Dielectric Thickness, 2 oz.
ecopper, r = 4.5, Rogers
Assembly Diagram (not to scale)
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet PTF10053.PDF ] |
Número de pieza | Descripción | Fabricantes |
PTF10052 | 35 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor | Ericsson |
PTF10053 | 12 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor | Ericsson |
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