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PDF SMP50-68 Data sheet ( Hoja de datos )
| Número de pieza | SMP50-68 | |
| Descripción | TELECOM EQUIPMENT PROTECTION: TRISIL | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SMP50-68 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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® SMP50-xxx
TELECOM EQUIPMENT PROTECTION: TRISIL™
FEATURES
s Bidirectional crowbar protection
s Voltage range from 62V to 270V
s Low capacitance from 15pF to 30pF typ.@ 50V
s Low leakage current: IR = 2µA max.
s Holding current: IH = 150 mA min.
s Repetitive peak pulse current:
IPP = 50 A (10/1000 µs)
MAIN APPLICATIONS
Telecommunication equipment such as
s Analog and digital line cards (xDSL, T1/E1,
ISDN...).
s Terminals (phone, fax, modem...) and central
office equipment.
SMA
(JEDEC DO-214AC)
SCHEMATIC DIAGRAM
DESCRIPTION
The SMP50-xxx series has been designed to
protect telecommunication equipment against
lightning and transient induced by AC power lines.
The package / die size ratio has been optimized by
using the SMA package.
BENEFITS
Trisils are not subject to ageing and provide a fail safe mode in short circuit for a better protection. Trisils
are used to help equipment to meet various standards such as UL1950, IEC950 / CSA C22.2, UL1459
and FCC part 68. Trisils have UL94 V0 resin approved. SMA package is JEDEC registred. (Trisils are UL
497B approved - file: E136224).
November 2002 - Ed: 3B
1/8
1 page  
SMP50-xxx
Fig. 3: Relative variation of holding current versus
junction temperature.
IH[Tj] / IH[Tj=25°C]
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2 Tj(°C)
0.0
-40 -20 0 20 40 60 80 100 120
Fig. 4: Relative variation of breakover voltage ver-
sus junction temperature.
VBO[Tj] / VBO[Tj=25°C]
1.08
1.06
1.04
1.02
1.00
0.98
0.96
Tj(°C)
0.94
-40 -20 0 20 40 60
80 100 120
Fig. 5: Relative variation of leakage current versus
junction temperature (typical values).
IRM[Tj] / IRM[Tj=25°C]
2000
1000
VR=VRM
100
10
1
25
Tj(°C)
50 75 100
125
Fig. 6: Relative variation of thermal impedance
versus pulse duration.
Zth(j-a)(°C/W)
200
100
Zth(j-a)
10
1
1E-3
1E-2
tp (s)
1E-1 1E+0
1E+1
1E+2 5E+2
Fig. 7: Relative variation of junction capacitance
versus reverse voltage applied (typical values).
C [VR] / C [VR=50V]
2.5
2.0
1.5
1.0
0.5
0.0
1
2
VR(V)
5 10 20
Tj=25°C
F=1MHz
VRMS=1V
50 100
300
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SMP50-68.PDF ] | |
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