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PDF TPC8110 Data sheet ( Hoja de datos )
| Número de pieza | TPC8110 | |
| Descripción | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TPC8110
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
TPC8110
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
Unit: mm
• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 17 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 16 S (typ.)
• Low leakage current: IDSS = −10 µA (max) (VDS = −40 V)
• Enhancement-mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed(Note 1)
Drain power dissipation (t = 10 s)
(Note 2a)
Drain power dissipation (t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
−40
−40
±20
−8
−32
1.9
1.0
59.4
−8
0.19
150
−55 to 150
V
V
V
A
W
W
mJ
A
mJ
°C
°C
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
JEDEC
―
JEITA
―
TOSHIBA
2-6J1B
Weight: 0.080 g (typ.)
Circuit Configuration
8765
1234
1 2002-05-24
1 page  
50
Common source
Pulse test
40
RDS (ON) – Tc
ID = 8.0 A
30
VGS = −4 V
−2.0/−4.0 A
20
10 −10 V
ID = −2.0/−4.0/−8.0 A
0
−80 −40
0
40 80 120 160
Case temperature Tc (°C)
TPC8110
−100
−10
IDR – VDS
−10
−3
−5
−1
−0.1
0
−1 VGS = 0 V, 1 V
Common source
Ta = 25°C
Pulse test
0.4 0.8 1.2 1.6
Drain-source voltage VDS (V)
10000
5000
3000
Capacitance – VDS
Ciss
1000
500
300 Coss
100 Common source
50 VGS = 0 V
f = 1 MHz
30 Ta = 25°C
−0.1 −0.3 −0.5 −1
−3 −5 −10
Drain-source voltage VDS (V)
Crss
−30 −50
Vth – Tc
−2
Common source
VDS = −10 V
−1.6
ID = −1 mA
Pulse test
−1.2
−0.8
−0.4
0
−80 −40
0
40 80 120 160
Case temperature Tc (°C)
2.0
(1)
1.6
1.2
(2)
0.8
PD – Tc
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
t = 10 s
0.4
0
0 25 50 75 100 125 150 175
Ambient temperature Tc (°C)
Dynamic Input/Output Characteristics
−40
VDS
−30
Common source
ID = −10 A
Ta = 25°C
Pulse test
−40
−30
−20
−10
0
0
VGS
−16
−8
VDD = 32 V
−20
−10
20 40 80
Total gate charge Qg (nC)
0
80
5 2002-05-24
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPC8110.PDF ] | |
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