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PDF SI7392DP Data sheet ( Hoja de datos )
| Número de pieza | SI7392DP | |
| Descripción | N-Channel Reduced Qg/ Fast Switching WFET | |
| Fabricantes | Vishay Siliconix | |
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Si7392DP
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching WFETr
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.00975 @ VGS = 10 V
0.01375 @ VGS = 4.5 V
ID (A)
15
13
PowerPAK SO-8
6.15 mm
D
8D
7D
6D
5
S
1S
5.15 mm
2S
3G
4
Bottom View
Ordering Information: Si7392DP-T1
FEATURES
D Extremely Low Qgd WFET Technology for
Low Switching Losses
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr
Package with Low 1.07-mm Profile
D 100% Rg Tested
APPLICATIONS
D High-Side DC/DC Conversion
− Notebook
− Server
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30
"20
15 9
12 7
"50
4.1 1.5
5 1.8
3.2 1.1
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)a
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72165
S-41427—Rev. D, 26-Jul-04
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJC
Typical
20
53
3.5
Maximum
25
70
4.5
Unit
_C/W
www.vishay.com
1
1 page  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
Si7392DP
Vishay Siliconix
0.01
10−4
Single Pulse
10−3
10−2
10−1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72165
S-41427—Rev. D, 26-Jul-04
www.vishay.com
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SI7392DP.PDF ] | |
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