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Número de pieza | SI4936DY | |
Descripción | Dual N-Channel Enhancement Mode MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SI4936DY (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! June 1999
Si4936DY*
Dual N-Channel Enhancement Mode MOSFET
General Description
These N-Channel Enhancement Mode MOSFETs are
produced using Fairchild Semiconductor's advance
process that has been especially tailored to minimize
on-state resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Applications
Battery switch
Load switch
Motor controls
Features
5.8 A, 30 V. RDS(ON) = 0.037 Ω @ VGS = 10 V
RDS(ON) = 0.055 Ω @ VGS = 4.5 V
Low gate charge.
Fast switching speed.
High power and current handling capability.
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Si4936DY Rev. A
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet SI4936DY.PDF ] |
Número de pieza | Descripción | Fabricantes |
SI4936DY | Dual N-Channel Enhancement Mode MOSFET | Fairchild Semiconductor |
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