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PDF Si4362DY-T1 Data sheet ( Hoja de datos )
| Número de pieza | Si4362DY-T1 | |
| Descripción | N-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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N-Channel 30-V (D-S) MOSFET
Si4362DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.0045 @ VGS = 10 V
0.0055 @ VGS = 4.5 V
ID (A)
20
19
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
Ordering Information:
Si4362DY
Si4362DY-T1 (with Tape and Reel)
Si4362DY—E3 (Lead Free)
Si4362DY-T1—E3 (Lead Free with Tape and Reel)
FEATURES
D TrenchFETr Power MOSFET
D Optimized for “Low Side” Synchronous
Rectifier Operation
D 100% Rg Tested
APPLICATIONS
D DC/DC Converters
D Synchronous Rectifiers
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)a
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30
"12
20
15
60
2.9
3.5
2.2
−55 to 150
Unit
A
W
THERMAL RESISTANCE RATINGSa
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board, t v 10 sec
Document Number: 71628
S-40762—Rev. E, 19-Apr-04
Symbol
RthJA
RthJF
Typical
29
13
Maximum
35
16
Unit
_C/W
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