(PDF) SI2316DS Datasheet - N-Channel 30-V (D-S) MOSFET

Número de pieza	SI2316DS
Descripción	N-Channel 30-V (D-S) MOSFET
Fabricantes	Vishay Siliconix
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No Preview Available ! New Product N-Channel 30-V (D-S) MOSFET Si2316DS Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.050 @ VGS = 10 V 0.085 @ VGS = 4.5 V ID (A) 3.4 2.6 FEATURES D TrenchFETr Power MOSFET APPLICATIONS D Battery Switch TO-236 (SOT-23) G1 S2 3D Top View Si2316DS (C6)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Currentb Continuous Source Current (Diode Conduction)a, b Power Dissipationa, b Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C TA= 25_C TA= 70_C VDS VGS ID IDM IS PD TJ, Tstg 3.4 2.7 0.96 0.6 30 "20 16 0.8 –55 to 150 2.9 2.3 0.7 0.45 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 100 140 60 Maximum 130 175 75 Unit V A W _C Unit _C/W Document Number: 71798 S-05481—Rev. A, 21-Jan-02 www.vishay.com 1 1 page

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PDF SI2316DS Data sheet ( Hoja de datos )