(PDF) SI1303DL Datasheet - P-Channel 2.5-V (G-S) MOSFET

Número de pieza	SI1303DL
Descripción	P-Channel 2.5-V (G-S) MOSFET
Fabricantes	Vishay Siliconix
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No Preview Available ! P-Channel 2.5-V (G-S) MOSFET Si1303DL Vishay Siliconix PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.430 @ VGS = - 4.5 V - 20 0.480 @ VGS = - 3.6 V 0.700 @ VGS = - 2.5 V ID (A) - 0.72 - 0.68 - 0.56 SOT-323 SC-70 (3-LEADS) G1 3D S2 Top View Marking Code LA XX Lot Traceability and Date Code Part # Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage Gate-Source Voltage VDS - 20 VGS "12 Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID IDM IS PD TJ, Tstg - 0.72 - 0.67 - 0.58 - 0.54 - 2.5 - 0.28 - 0.24 0.34 0.29 0.22 0.19 - 55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71075 S-03721—Rev. C, 07-Apr-03 t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 315 360 285 Maximum 375 430 340 Unit _C/W www.vishay.com 1 1 page

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PDF SI1303DL Data sheet ( Hoja de datos )