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PDF SM746 Data sheet ( Hoja de datos )
| Número de pieza | SM746 | |
| Descripción | SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | |
| Fabricantes | Polyfet RF Devices | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SM746 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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polyfet rf devices
SM746
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
TM
"Polyfet" process features
low feedback and output capacitances
resulting in high F t transistors with high
input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
175.0 Watts Single Ended
Package Style AM
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
Total
Device
Dissipation
270 Watts
Junction to
Case Thermal
Resistance
o
0.65 C/W
ABSOLUTE MAXIMUM RATINGS ( T = 25 oC )
Maximum
Junction
Temperature
200 oC
Storage
Temperature
oo
-65 C to 150 C
DC Drain
Current
11.0 A
Drain to
Gate
Voltage
125 V
Drain to
Source
Voltage
125 V
Gate to
Source
Voltage
20 V
RF CHARACTERISTICS ( 175.0 WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Power Gain
η Drain Efficiency
13
65
dB Idq = 0.60 A, Vds = 50.0 V, F = 175MHz
% Idq = 0.60 A, Vds = 50.0 V, F = 175 MHz
VSWR Load Mismatch Tolerance
20:1 Relative Idq = 0.60 A, Vds = 50.0 V, F = 175MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss
Idss
Drain Breakdown Voltage
Zero Bias Drain Current
125 V Ids = 60.00 mA, Vgs = 0V
6.0 mA
Vds = 50.0 V, Vgs = 0V
Igss Gate Leakage Current
1 uA
Vds = 0V Vgs = 30V
Vgs Gate Bias for Drain Current
1
7V
Ids = 0.30 A, Vgs = Vds
gM Forward Transconductance
4.8 Mho Vds = 10V, Vgs = 5V
Rdson Saturation Resistance
0.50
Ohm
Vgs = 20V, Ids = 6.00 A
Idsat
Saturation Current
21.00
Amp Vgs = 20V, Vds = 10V
Ciss Common Source Input Capacitance
288.0
pF Vds = 50.0 Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitance
1.2 pF Vds = 50.0 Vgs = 0V, F = 1 MHz
Coss Common Source Output Capacitance
102.0
pF Vds = 50.0 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 03/08/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet SM746.PDF ] | |
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