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PDF 2SD1899-Z Data sheet ( Hoja de datos )
| Número de pieza | 2SD1899-Z | |
| Descripción | TO-252 Plastic-Encapsulated Transistors | |
| Fabricantes | TRANSYS Electronics Limited | |
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Transys
Electronics
LIMITED
TO-252 Plastic-Encapsulated Transistors
2SD1899-Z TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM:
2 W (Tamb=25℃)
Collector current
ICM: 3
Collector-base voltage
A
V(BR)CBO:
60 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
TO-252
1. BASE
2. COLLECTOR
3. EMITTER
1 23
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specifie)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn on Time
Switching Time
Storage Time
Fall Time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(sat)
fT
Cob
ton
tstg
tf
Test conditions
Ic=100µA, IE=0
Ic=1mA, IB=0
IE=100µA,IC=0
VCB=60V, IE=0
VEB=7V, IC=0
VCE=2V, IC=200mA
VCE=2V, IC=600mA
VCE=2V, IC=2A
IC=1.5A, IB=150mA
IC=1.5A, IB=150mA
VCE=5V, IC=1.5A
VCB=10V, IE=0, f=1MHz
VCC=30V, IC=1A, IB1=-IB2=-0.05A
MIN
60
60
7
60
100
50
TYP MAX UNIT
V
V
V
10 µA
10 µA
400
0.25 V
1.2 V
120 MHz
30 pF
0.5
2.0 µs
0.5
CLASSIFICATION OF hFE(1)
Rank
M
Range
100-200
L
160-320
K
200-400
1 page | ||
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| PDF Descargar | [ Datasheet 2SD1899-Z.PDF ] | |
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