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Número de pieza | 2SD1620 | |
Descripción | NPN Epitaxial Planar Silicon Transistor | |
Fabricantes | Sanyo Semicon Device | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SD1620 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! Ordering number:EN1719B
NPN Epitaxial Planar Silicon Transistor
2SD1620
1.5V, 3V Strobe Applications
Features
· Less power dissipation because of low VCE(sat),
permitting more flashes of light to be emitted.
· Large current capacity and highly resistant to break-
down.
· Excellent linearity of hFE in the region from low
current to high current.
· Ultrasmall size supports high-density, ultrasmall-
sized hybrid IC designs.
Package Dimensions
unit:mm
2038A
[2SD1620]
4.5
1.6
1.5
0.4 0.5
32
1.5
1
3.0
0.75
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEX
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Mounted on ceramic board (250mm2× 0.8mm)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VCB=20V, IE=0
VEB=4V, IC=0
VCE=2V, IC=3A
VCE=10V, IC=50mA
VCB=10V, f=1MHz
IC=3A, IB=60mA
0.4
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
Ratings
30
20
10
6
3
5
500
1.3
150
–55 to +150
Unit
V
V
V
V
A
A
mW
W
˚C
˚C
Ratings
min typ max
Unit
100 nA
100 nA
140 210
200 MHz
30 pF
0.3 0.4 V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21599TH (KT)/N1596TS (KOTO) 8-7707/5277KI/3045MW, TS No.1719–1/3
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet 2SD1620.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SD1620 | NPN Epitaxial Planar Silicon Transistor | Sanyo Semicon Device |
2SD1620 | NPN Epitaxial Planar Silicon Transistor | Kexin |
2SD1620 | Bipolar Transistor | ON Semiconductor |
2SD1621 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
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