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PDF 2SD1410A Data sheet ( Hoja de datos )
| Número de pieza | 2SD1410A | |
| Descripción | Silicon NPN Triple Diffused Type TRANSISTOR | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SD1410A (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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2SD1410A
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
2SD1410A
High Voltage Switching Applications
Industrial Applications
Unit: mm
• High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 2 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 300 V
Collector-emitter voltage
VCEO 250 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 6 A
Base current
IB 1 A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
PC
2.0
W
25
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEDEC
―
Note1: Using continuously under heavy loads (e.g. the application of high
JEITA
―
temperature/current/voltage and the significant change in
TOSHIBA
2-10R1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 1.7 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Collector
Base
≈ 4 kΩ
Emitter
1 2009-12-21
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SD1410A.PDF ] | |
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