(PDF) FCX617 Datasheet - NPN SILICON POWER (SWITCHING) TRANSISTOR

Número de pieza	FCX617
Descripción	NPN SILICON POWER (SWITCHING) TRANSISTOR
Fabricantes	Zetex Semiconductors
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No Preview Available ! SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR ISSSUE 1 - NOVEMBER 1998 FEATURES * 2W POWER DISSIPATION * 12A Peak Pulse Current * Excellent HFE Characteristics up to 12 Amps * Extremely Low Saturation Voltage E.g. 8mv Typ. * Extremely Low Equivalent On-resistance; RCE(sat) 50mΩ at 3A Partmarking Detail - 617 FCX617 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25°C VCBO VCEO VEBO ICM IC IB Ptot 15 V 15 V 5V 12 A 3A 500 mA 1† W 2‡ W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C † recommended Ptot calculated using FR4 measuring 15x15x0.6mm ‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for these devices Refer to the handling instructions for soldering surface mount components. 1 page

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PDF FCX617 Data sheet ( Hoja de datos )