(PDF) 2SK3162 Datasheet - Silicon N Channel MOS FET High Speed Power Switching

Número de pieza	2SK3162
Descripción	Silicon N Channel MOS FET High Speed Power Switching
Fabricantes	Hitachi Semiconductor
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No Preview Available ! 2SK3162 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–220FM ADE-208-735B (Z) 3rd. Edition February 1999 D G S 123 1. Gate 2. Drain 3. Source 1 page 2SK3162 1000 500 Body–Drain Diode Reverse Recovery Time di / dt = 50 A / µs VGS = 0, Ta = 25°C 200 100 50 20 10 0.1 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) 10000 5000 2000 1000 500 Typical Capacitance vs. Drain to Source Voltage Ciss Coss 200 100 Crss 50 20 VGS = 0 f = 1 MHz 10 0 10 20 30 40 50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics 200 I D = 20 A 20 160 VDS 120 VDD = 150 V 100 V 50 V 16 VGS 12 80 8 40 VDD = 150 V 4 100 V 50 V 0 0 40 80 120 160 200 Gate Charge Qg (nc) 1000 500 200 Switching Characteristics t d(off) tf 100 t r 50 VGS = 10 V, V DD = 30 V t d(on) PW = 5 µs, duty < 1% 20 10 0.1 0.2 0.5 1 2 5 10 20 Drain Current I D (A) 5 5 Page

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PDF 2SK3162 Data sheet ( Hoja de datos )