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Número de pieza | 2SK1880 | |
Descripción | Silicon N-Channel MOS FET | |
Fabricantes | Hitachi Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SK1880 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! 2SK1880(L), 2SK1880(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• No secondary breakdown
• Suitable for Switching regulator
Outline
DPAK-1
4
4
1
23
D
12 3
1. Gate
G 2. Drain
3. Source
4. Drain
S
1 page Drain to Source Saturation Voltage
vs. Gate to Source Voltage
20
Pulse Test
16
12 ID = 1.5 A
8 1A
4 0.5 A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Temperature
20
16
12
ID = 1 A
8
4
0.5 A
–40 0 40 80 120 160
Case Temperature Tc (°C)
2SK1880(L), 2SK1880(S)
Static Drain to Source on State
Resistance vs. Drain Current
100
50 Pulse Test
20
10 VGS = 10 V
5
2
1
0.05 0.1 0.2 0.5 1 2
Drain Current ID (A)
5
Forward Transfer Admittance
vs. Drain Current
5
Pulse Test
2 VDS = 20 V
Tc = –25°C
1
0.5
75°C
0.2 25°C
0.1
0.05
0.02 0.05 0.1 0.2 0.5 1
Drain Current ID (A)
2
5
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet 2SK1880.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SK1880 | Silicon N-Channel MOS FET | Hitachi Semiconductor |
2SK1880L | Silicon N-Channel MOS FET | Hitachi Semiconductor |
2SK1880S | Silicon N-Channel MOS FET | Hitachi Semiconductor |
2SK1881-L | N-channel MOS-FET | Fuji Electric |
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