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PDF 2SJ496 Data sheet ( Hoja de datos )
| Número de pieza | 2SJ496 | |
| Descripción | Silicon P-Channel MOS FET High Speed Power Switching | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SJ496 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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2SJ496
Silicon P-Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS(on) = 0.12Ω typ. (at VGS = –10 V, ID = –2.5 A)
• 4V gate drive devices.
• Large current capacitance
ID = –5 A
Outline
TO-92 Mod
ADE-208-482
1st. Edition
D 321
1. Source
G 2. Drain
3. Gate
S
1 page  
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–1.0
Pulse Test
–0.8
–0.6
I D = –5 A
–0.4
–2 A
–0.2
–1 A
0 –4 –8 –12 –16 –20
Gate to Source Voltage V GS (V)
2SJ496
Static Drain to Source on State Resistance
vs. Drain Current
1
0.5
0.2
0.1
0.05
VGS = –4 V
–10 V
0.02
0.01
–0.1
–0.3 –1 –3
Drain Current
Pulse Test
–10 –30 –100
I D (A)
Static Drain to Source on State Resistance
vs. Temperature
0.5
Pulse Test
0.4
0.3 I D = –5 A –2 A
0.2 VGS = –4 V
0.1
–10 V
–1 A
–5 A
–1, –2 A
0
–40 0 40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
20
10
Ta = –25 °C
5
25 °C
2
75 °C
1
0.5
0.1
–0.1
–0.2 –0.5 –1
Drain Current
V DS = –10 V
Pulse Test
–2 –5 –10
I D (A)
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet 2SJ496.PDF ] | |
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