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PDF 2SD638 Data sheet ( Hoja de datos )
| Número de pieza | 2SD638 | |
| Descripción | Silicon NPN epitaxial planer type(For medium-power general amplification) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SD638, 2SD639
Silicon NPN epitaxial planer type
For medium-power general amplification
Complementary to 2SB643 and 2SB644
s Features
q Low collector to emitter saturation voltage VCE(sat).
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to 2SD638
base voltage 2SD639
Collector to 2SD638
emitter voltage 2SD639
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
30
60
25
50
7
1
0.5
600
150
–55 ~ +150
Unit
V
V
V
A
A
mW
˚C
˚C
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
321
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base
voltage
2SD638
2SD639
ICBO
ICEO
VCBO
VCB = 20V, IE = 0
VCE = 20V, IB = 0
IC = 10µA, IE = 0
0.1 µA
1 µA
30
V
60
Collector to emitter 2SD638
voltage
2SD639
VCEO
IC = 2mA, IB = 0
25
50
V
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
VEBO
hFE1*1
hFE2
VCE(sat)
fT
Cob
IE = 10µA, IC = 0
7
V
VCE = 10V, IC = 10mA
85 160 340
VCE = 10V, IC = 500mA*2
40 90
IC = 300mA, IB = 30mA
0.35 0.6
V
VCB = 10V, IE = –50mA, f = 200MHz 200 MHz
VCB = 10V, IE = 0, f = 1MHz
6 15 pF
*2 Pulse measurement
*1hFE1 Rank classification
Rank
Q
R
S
hFE1 85 ~ 170 120 ~ 240 170 ~ 340
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SD638.PDF ] | |
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