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PDF LTE42012R Data sheet ( Hoja de datos )
| Número de pieza | LTE42012R | |
| Descripción | NPN microwave power transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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DISCRETE SEMICONDUCTORS
DATA SHEET
LTE42012R
NPN microwave power transistor
Product specification
Supersedes data of June 1992
1997 Feb 21
1 page  
Philips Semiconductors
NPN microwave power transistor
Product specification
LTE42012R
Table 1 Common-emitter scattering parameters: VCE = 16 V; IC = 400 mA; Tmb = 25 °C; Zo = 50 Ω; typical values.
f
(MHz)
s11
MAGNITUDE
(ratio)
ANGLE
(deg)
s21
MAGNITUDE
(ratio)
ANGLE
(deg)
s12
MAGNITUDE
(ratio)
ANGLE
(deg)
s22
MAGNITUDE
(ratio)
ANGLE
(deg)
2000
2100
2200
2300
2400
2 500
2600
2700
2800
2900
3000
3100
3200
3300
3400
3500
3600
3700
3800
3900
4000
4100
4200
4300
4400
4500
4600
4700
4800
4900
5000
0.84
0.84
0.84
0.85
0.85
0.85
0.85
0.85
0.85
0.84
0.83
0.82
0.80
0.78
0.76
0.74
0.71
0.70
0.67
0.66
0.64
0.64
0.65
0.67
0.69
0.72
0.75
0.76
0.78
0.79
0.77
163 0.049
64
161 0.051 62.7
159 0.054 60.4
158 0.055 58.8
156 0.057 57.5
155 0.060 56.1
154 0.064 54.9
153 0.067 53.1
152 0.071 51.3
150 0.073 49.5
149 0.076 48.0
149 0.080 46.0
147 0.084 44.1
146 0.088 40.5
145 0.091 36.1
144 0.093 34.4
143 0.095 30.7
142 0.095 26.3
142 0.093 21.6
142 0.091 17.0
142 0.088 13.2
142 0.084 9.7
143 0.077 7.0
143 0.068 5.9
143 0.060 8.2
141 0.054 13.8
139 0.050 20.5
137 0.050 31.2
135 0.054 43.5
133 0.061 46.6
130 0.068 54.3
0.96 47.2
0.94 43.3
0.93 39.8
0.91 36.2
0.91 32.2
0.90 29.1
0.89 24.6
0.89 21.2
0.89 17.2
0.90 13.8
0.90 9.3
0.91 5.2
0.92 0.6
0.93 −4.3
0.95 −9.7
0.97 −16.1
0.98 −23.2
0.99 −30.6
0.99 −37.9
1.00 −46.6
0.98 −55.8
0.95 −64.9
0.91 −73.8
0.86 −82.6
0.81 −92.3
0.74 −101.7
0.68 −110.6
0.61 −119.7
0.56 −129.1
0.50 −139.5
0.44 −148.6
0.60
0.59
0.59
0.59
0.60
0.60
0.60
0.60
0.61
0.62
0.62
0.63
0.64
0.65
0.67
0.69
0.70
0.73
0.76
0.79
0.82
0.85
0.88
0.90
0.93
0.94
0.95
0.96
0.97
0.97
0.97
179.3
178.0
175.6
174.2
172.6
171.1
169.8
168.6
167.1
165.7
164.7
163.8
163.0
161.5
160.9
159.6
158.3
156.2
153.6
150.7
147.0
143.1
138.4
133.6
129.3
124.9
120.1
116.5
113.5
110.1
106.7
1997 Feb 21
5
5 Page 
Philips Semiconductors
NPN microwave power transistor
NOTES
Product specification
LTE42012R
1997 Feb 21
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet LTE42012R.PDF ] | |
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