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PDF MIC5010 Data sheet ( Hoja de datos )
| Número de pieza | MIC5010 | |
| Descripción | Full-Featured High- or Low-Side MOSFET Driver | |
| Fabricantes | Micrel Semiconductor | |
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MIC5010
MIC5010
Micrel
Full-Featured High- or Low-Side MOSFET Driver
Not Recommended for New Designs
General Description
The MIC5010 is the full-featured member of the Micrel
MIC501X driver family. These ICs are designed to drive the
gate of an N-channel power MOSFET above the supply rail
in high-side power switch applications. The MIC5010 is
compatible with standard or current-sensing power FETs in
both high- and low-side driver topologies.
The MIC5010 charges a 1nF load in 60µs typical and
protects the MOSFET from over-current conditions. Faster
switching is achieved by adding two 1nF charge pump
capacitors. The current sense trip point is fully program-
mable and a dynamic threshold allows high in-rush current
loads to be started. A fault pin indicates when the MIC5010
has turned off the FET due to excessive current.
Other members of the Micrel driver family include the
MIC5011 minimum parts count 8 pin driver, MIC5012 dual
driver, and MIC5013 protected 8 pin driver.
Features
• 7V to 32V operation
• Less than 1µA standby current in the “OFF” state
• Internal charge pump to drive the gate of an N-channel
power FET above supply
• Available in small outline SOIC packages
• Internal zener clamp for gate protection
• 25µs typical turn-on time to 50% gate overdrive
• Programmable over-current sensing
• Dynamic current threshold for high in-rush loads
• Fault output pin indicates current faults
• Implements high- or low-side switches
Applications
• Lamp drivers
• Relay and solenoid drivers
• Heater switching
• Power bus switching
• Motion control
• Half or full H-bridge drivers
Typical Application
Ordering Information
Part Number
MIC5010BN
MIC5010BM
Temperature Range
–40°C to +85°C
–40°C to +85°C
Package
14-pin Plastic DIP
14-pin SOIC
5
Control Input
RTH
20kΩ
MIC5010
1 Inhibit Fault 14
2 NC
V+ 13
3 Input NC 12
4 Thresh C1 11
5 Sense Com 10
6 Source C2 9
7 Gnd Gate 8
V+ =24V
+
10µF
IRCZ44
(S=2590,
R=11mΩ)
Note: The MIC5010 is ESD sensitive.
SENSE
KELVIN
RS SOURCE
43Ω LOAD
R1
4.3kΩ
SR(V +100mV)
R=
TRIP
S
R
I
L
–
(V +100mV)
TRIP
R1= V+SRRS
100mV (SR+RS)
2200
RTH = V
–1000
TRIP
For this example:
I =30A (trip current)
L
V =100mV
TRIP
Figure 1. High-Side Driver with
Current-Sensing MOSFET
Protected under one or more of the following Micrel patents:
patent #4,951,101; patent #4,914,546
April 1998
5-87
1 page  
MIC5010
Typical Characteristics (Continued)
High-side Turn-on Time*
350
300
250 CGATE =1 nF
200
150
100
50
0 0 3 6 9 12 15
SUPPLY VOLTAGE (V)
Micrel
High-side Turn-on Time*
140
120
100 CGATE =1 nF
80 C2=1 nF
60
40
20
0
0 3 6 9 12 15
SUPPLY VOLTAGE (V)
High-side Turn-on Time*
3.5
3.0
2.5 CGATE =10 nF
2.0
1.5
1.0
0.5
0
0 3 6 9 12 15
SUPPLY VOLTAGE (V)
High-side Turn-on Time*
1.4
1.2
1.0 CGATE =10 nF
0.8 C2=1 nF
0.6
0.4
0.2
0
0 3 6 9 12 15
SUPPLY VOLTAGE (V)
Charge Pump
Output Current
250
VGATE=V+
200
Charge Pump
Output Current
1.0
0.8 VGATE=V+
150
VGATE =V++5V
100
0.6
0.4 VGATE=V ++5V
50
0
0
VS=V +–5V
5 10 15 20 25 30
0.2
0
0
C2=1 nF
VS=V +–5V
5 10 15 20 25
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
* Time for gate to reach V+ + 5V in test circuit with VS = V+ – 5V (prevents gate clamp from interfering with measurement).
30
April 1998
5-91
5
5 Page 
MIC5010
Applications Information (Continued)
constant, and it simulates the thermal response of the
filament. If the lamp is pulse-width modulated, the current
limit will be reduced by the residual charge left in CTH.
Modifying Switching Times. Do not add external capaci-
tors to the gate to slow down the switching time. Add a
resistor (1kΩ to 51kΩ) in series with the gate of the MOS-
FET to achieve this result.
External capacitors can be added at C1 and C2 for faster
switching times (see Block Diagram). Values of 100pF to
1nF produce useful speed increases. If component count is
critical, C2 (pins 9 to 10) can be used alone with only a small
loss of speed compared to using both capacitors.
Bootstrapped High-Side Driver (Figure 6). The speed of
a high-side driver can be increased to better than 10µs by
bootstrapping the supply off of the MOSFET source. This
topology can be used where the load is pulse-width modu-
lated (100Hz to 20kHz), or where it is energized for only a
short period of time (≤25ms). If the load is left energized for
a long period of time (>25ms), the bootstrap capacitor will
discharge and the MIC5010 supply pin will fall to V+ = VDD
– 1.4. Under this condition pins 5 and 6 will be held above
V+ and may false trigger the over-current circuit. A larger
capacitor will lengthen the maximum “on” time; 1000µF will
hold the circuit up for 2.5 seconds, but requires more charge
time when the circuit is turned off. The optional Schottky
barrier diode improves turn-on time on supplies of less than
10V.
Since the supply current in the “off” state is only a small
leakage, the 100nF bypass capacitor tends to remain
charged for several seconds after the MIC5010 is turned off.
Micrel
In a PWM application the chip supply is actually much
higher than the system supply, which improves switching
time.
VDD=7 to 15V
Control Input
20kΩ
MIC5010
1 Inhibit Fault 14
1N5817
2 NC
3 Input
V+ 13
NC 12 100nF
4 Thresh C1 11
5 Sense Com 10
6 Source C2 9
7 Gnd Gate 8
+
10µF
1N4001 (2)
IRF540
100Ω
18mΩ
R1= V +
1mA
LOAD
Figure 6. Bootstrapped
High-Side Driver
Electronic Circuit Breaker (Figure 7). The MIC5010 forms
the basis of a high-performance, fast-acting circuit breaker.
By adding feedback from FAULT to INPUT the breaker can
be made to automatically reset. If an over-current condition
5
12V 12V
100kΩ 100kΩ 100kΩ
100nF
10kΩ
MPSA05
20kΩ
MIC5010
1 Inhibit Fault 14
2 NC
V+ 13
3 Input
NC 12
4 Thresh C1 11
5 Sense Com 10
6 Source C2 9
7 Gnd Gate 8
1N4148
+
10µF
IRFZ40
100Ω
22mΩ
CPSL-3 (Dale)
10kΩ
LOAD
April 1998
Figure 7. 10-Ampere
Electronic Circuit Breaker
5-97
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet MIC5010.PDF ] | |
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