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PDF AME8801EEEV Data sheet ( Hoja de datos )
| Número de pieza | AME8801EEEV | |
| Descripción | 300mA CMOS LDO | |
| Fabricantes | Analog Microelectronics | |
| Logotipo |  |
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Analog Microelectronics, Inc.
AME8801/8812/8840
300mA CMOS LDO
n General Description
The AME8801/8840 family of positive, linear regulators
feature low quiescent current (30µA typ.) with low drop-
out voltage, making them ideal for battery applications.
The space-saving SOT-23-5 package is attractive for
"Pocket" and "Hand Held" applications.
These rugged devices have both Thermal Shutdown,
and Current Fold-back to prevent device failure under
the "Worst" of operating conditions.
In applications requiring a low noise, regulated supply,
place a 1000 pF capacitor between Bypass and Ground.
The AME8801 is stable with an output capacitance of
2.2µF or greater.
n Features
l Very Low Dropout Voltage
l Guaranteed 300mA Output
l Accurate to within 1.5%
l 30µA Quiescent Current
l Over-Temperature Shutdown
l Current Limiting
l Short Circuit Current Fold-back
l Noise Reduction Bypass Capacitor
l Power-Saving Shutdown Mode
l Space-Saving SOT-25 (SOT-23-5) Package
l Factory Pre-set Output Voltages
l Low Temperature Coefficient
n Functional Block Diagram
IN
EN
BYP
Overcurrent
Shutdown
Thermal
Shutdown
AMP
OUT
R1
V ref=1.215V
R2
GND
n Applications
l Instrumentation
l Portable Electronics
l Wireless Devices
l Cordless Phones
l PC Peripherals
l Battery Powered Widgets
l Electronic Scales
n Typical Application
INPUT
5V
IN OUT
AME8801
BYP
GND
EN
C1 C2
1 µF 1 n F
OUTPUT
C3
2 . 2 µF
1
1 page  
Analog Microelectronics, Inc.
AME8801/8812/8840
300mA CMOS LDO
n Absolute Maximum Ratings
P a ra m e te r
Maximum
Input Voltage
8
Output Current
Output Voltage
ESD Classification
PD / (VIN - VO)
GND - 0.3 to VIN + 0.3
B
n Recommended Operating Conditions
Unit
V
mA
V
P a ra m e te r
Ambient Temperature Range
Junction Temperature
Ra ting
-40 to +85
-40 to +125
Unit
oC
oC
n Thermal Information
Param ete r
Thermal Resistance (qja)
S OT-25
Ma x im um
260
Unit
oC / W
Internal Power Dissipation (PD)
(DT = 100oC)
S OT-25
380
mW
Thermal Resistance (qja)
S OT-26
260 oC / W
Internal Power Dissipation (PD)
(DT = 100oC)
S OT-26
380
mW
Maximum Junction Temperature
150 oC
Caution: Stress above the listed absolute rating may cause permanent damage to the device
5
5 Page 
Analog Microelectronics, Inc.
AME8801/8812/8840
300mA CMOS LDO
10000
1000
100
Stability vs. ESR vs ILOAD
Unstable Region
C L=1µF
10 Stable Region
1
0.1
0.01
0
Untested Region
50 100 150
ILOAD (mA)
200
10000
1000
Stability vs. ESR vs ILOAD
Unstable Region
100 C L=2µF
10 Stable Region
1
0.1
0.01
0
Untested Region
50 100 150
ILOAD (mA)
200
10000
1000
100
Stability vs. ESR vs ILOAD
Unstable Region
C L=3µF
10 Stable Region
1
0.1
0.01
0
Untested Region
50 100 150
ILOAD (mA)
200
10000
1000
100
Stability vs. ESR vs ILOAD
Unstable Region
C L=10µF
10 Stable Region
1
0.1
0.01
0.001
0
Untested Region
50 100 150
ILOAD (mA)
200
11
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet AME8801EEEV.PDF ] | |
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