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PDF AM82731-012 Data sheet ( Hoja de datos )
| Número de pieza | AM82731-012 | |
| Descripción | RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS | |
| Fabricantes | STMicroelectronics | |
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AM82731-012
RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICATIONS
....... REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 12 W MIN. WITH 6.0 dB GAIN
PRELIMINARY DATA
.400 x .400 2LFL (S036)
hermetically sealed
ORDER CODE
AM82731-012
BRANDING
82731-12
DESCRIPTION
The AM82731-012 device is a high power silicon
bipolar NPN transistor specifically designed for S-
Band radar pulsed output and driver applications.
This device is capable of operaion over a wide
range of pulse widths, duty cycles, and tempera-
tures and can withstand a 3:1 output VSWR with
a + 1 dB input overdrive. Low RF thermal resist-
ance, refractory/gold metallization, and automatic
wire bonding techniques ensure high reliability and
product consistency (including phase charac-
teristics).
The AM82731-012 is supplied in the Hermetic Met-
al/Ceramic package with internal Input/Output im-
pedance matching sircuitry, and is intended for
military and other high reliability applications.
PIN CONNECTION
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
PDISS
Power Dissipation* (TC ≤ 50˚C)
IC Device Current*
VCC Collector-Supply Voltage*
TJ Junction Temperature (Pulsed RF Operation)
TSTG
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
Value
50
2.0
46
250
− 65 to +200
Unit
W
A
V
°C
°C
4.0 °C/W
August 1992
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