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PDF HMC481MP86 Data sheet ( Hoja de datos )
| Número de pieza | HMC481MP86 | |
| Descripción | SiGe HBT GAIN BLOCK MMIC AMPLIFIER/ DC - 5.0 GHz | |
| Fabricantes | Hittite Microwave Corporation | |
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v00.0603
MICROWAVE CORPORATION
HMC481MP86
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5.0 GHz
8
8 - 254
Typical Applications
The HMC481MP86 is an ideal RF/IF
gain block & LO or PA driver for:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio& Test Equipment
Functional Diagram
Features
P1dB Output Power: +19 dBm
Gain: 20 dB
Output IP3: +33 dBm
Cascadable 50 Ohm I/Os
Single Supply: +6V to +12V
General Description
The HMC481MP86 is a SiGe Heterojunction Bipolar
Transistor (HBT) Gain Block MMIC SMT amplifier
covering DC to 5 GHz. This Micro-P packaged
amplifier can be used as a cascadable 50 Ohm
RF/IF gain stage as well as a LO or PA driver with
up to +21 dBm output power. The HMC481MP86
offers 20 dB of gain with a +33 dBm output IP3
at 850 MHz while requiring only 74 mA from a
single positive supply. The Darlington feedback
pair used results in reduced sensitivity to normal
process variations and excellent gain stability over
temperature while requiring a minimal number of
external bias components.
Electrical Specifications, Vs= 8.0 V, Rbias= 39 Ohm, TA = +25° C
Parameter
Min. Typ.
Gain
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
18.5
15.5
12.5
10.5
9.0
20.0
17.0
14.0
12.0
10.5
Gain Variation Over Temperature
DC - 5.0 GHz
0.008
Input Return Loss
DC - 1.0 GHz
1.0 - 5.0 GHz
13
17
Output Return Loss
DC - 1.0 GHz
1.0 - 4.0 GHz
4.0 - 5.0 GHz
20
25
15
Reverse Isolation
DC - 5.0 GHz
18
Output Power for 1 dB Compression (P1dB)
0.5 - 1.0 GHz 16 20
1.0 - 2.0 GHz 15 18
2.0 - 3.0 GHz 14 17
3.0 - 4.0 GHz 12 15
4.0 - 5.0 GHz
9
12
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
0.5 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
33
31
29
26
Noise Figure
DC - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 5.0 GHz
3.5
4.0
4.5
Supply Current (Icq)
74
Max.
0.012
Units
dB
dB
dB
dB
dB
dB/ °C
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
mA
Note: Data taken with broadband bias tee on device output.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 page  
v00.0603
MICROWAVE CORPORATION
HMC481MP86
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5.0 GHz
8 Pin Descriptions
Pin Number
Function
1 RFIN
Description
This pin is DC coupled.
An off chip DC blocking capacitor is required.
Interface Schematic
3 RFOUT
2, 4 GND
RF output and DC Bias (Vcc) for the output stage.
These pins must be connected to RF/DC ground.
Application Circuit
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. RBIAS provides DC bias stability over temperature.
Recommended Bias Resistor Values
for Icc= 74 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs)
RBIAS VALUE
RBIAS POWER RATING
6V
11 Ω
1/8 W
8V
39 Ω
1/4 W
10V
62 Ω
1/2 W
12V
91 Ω
1W
Recommended Component Values for Key Application Frequencies
Component
L1
C1, C2
50
270 nH
0.01 µF
900
56 nH
100 pF
Frequency (MHz)
1900
2200
2400
18 nH
18 nH
15 nH
100 pF
100 pF
100 pF
3500
8.2 nH
100 pF
5000
6.8 nH
100 pF
8 - 258
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HMC481MP86.PDF ] | |
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