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PDF AM29F016-75SC Data sheet ( Hoja de datos )
| Número de pieza | AM29F016-75SC | |
| Descripción | 16-Megabit (2/097/152 x 8-Bit) CMOS 5.0 Volt-only/ Sector Erase Flash Memory | |
| Fabricantes | Advanced Micro Devices | |
| Logotipo |  |
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FINAL
Am29F016
16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only,
Sector Erase Flash Memory
DISTINCTIVE CHARACTERISTICS
s 5.0 Volt ± 10% for read and write operations
— Minimizes system level power requirements
s Compatible with JEDEC-standards
— Pinout and software compatible with
single-power supply Flash
— Superior inadvertent write protection
s 48-pin TSOP
s 44-pin SO
s Minimum 100,000 write/erase cycles
guaranteed
s High performance
— 70 ns maximum access time
s Sector erase architecture
— Uniform sectors of 64 Kbytes each
— Any combination of sectors can be erased.
Also supports full chip erase
s Group sector protection
— Hardware method that disables any combination
of sector groups from write or erase operations
(a sector group consists of 4 adjacent sectors of
64 Kbytes each)
s Embedded Erase Algorithms
— Automatically pre-programs and erases the chip
or any sector
s Embedded Program Algorithms
— Automatically programs and verifies data at
specified address
s Data Polling and Toggle Bit feature for
detection of program or erase cycle
completion
s Ready/Busy output (RY/BY)
— Hardware method for detection of program or
erase cycle completion
s Erase Suspend/Resume
— Supports reading or programming data to a
sector not being erased
s Low power consumption
— 25 mA typical active read current
— 30 mA typical program/erase current
s Enhanced power management for standby
mode
— <1 µA typical standby current
— Standard access time from standby mode
s Hardware RESET pin
— Resets internal state machine to the read mode
GENERAL DESCRIPTION
The Am29F016 is a 16 Mbit, 5.0 Volt-only Flash memory
organized as 2 Megabytes of 8 bits each. The 2 Mbytes
of data is divided into 32 sectors of 64 Kbytes for flexible
erase capability. The 8 bits of data appear on DQ0–DQ7.
The Am29F016 is offered in 48-pin TSOP and 44-pin SO
packages. This device is designed to be programmed
in-system with the standard system 5.0 Volt VCC supply.
12.0 Volt VPP is not required for program or erase
operations. The device can also be reprogrammed in
standard EPROM programmers.
The standard Am29F016 offers access times of 70
ns, 90 ns, 120 ns, and 150 ns, allowing high-speed
microprocessors to operate without wait states. To
eliminate bus contention, the device has separate
chip enable (CE), write enable (WE), and output
enable (OE) controls.
The Am29F016 is entirely command set compatible
with the JEDEC single-power supply Flash standard.
Commands are written to the command register using
standard microprocessor write timings. Register
contents serve as input to an internal state-machine
that controls the erase and programming circuitry.
Write cycles also internally latch addresses and data
needed for the programming and erase operations.
Reading data out of the device is similar to reading
from 12.0 Volt Flash or EPROM devices.
The Am29F016 is programmed by executing the pro-
gram command sequence. This will invoke the Embed-
Publication# 18805 Rev: D Amendment/0
Issue Date: April 1997
1 page  
CONNECTION DIAGRAMS
NC
NC
A19
A18
A17
A16
A15
A14
A13
A12
CE
VCC
NC
RESET
A11
A10
A9
A8
A7
A6
A5
A4
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
NC
NC
A20
NC
WE
OE
RY/BY
DQ7
DQ6
DQ5
DQ4
VCC
VSS
VSS
DQ3
DQ2
DQ1
DQ0
A0
A1
A2
A3
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Standard TSOP
Reverse TSOP
48 NC
47 NC
46 A20
45 NC
44 WE
43 OE
42 RY/BY
41 DQ7
40 DQ6
39 DQ5
38 DQ4
37 VCC
36 VSS
35 VSS
34 DQ3
33 DQ2
32 DQ1
31 DQ0
30 A0
29 A1
28 A2
27 A3
26 NC
25 NC
18805D-3
48 NC
47 NC
46 A19
45 A18
44 A17
43 A16
42 A15
41 A14
40 A13
39 A12
38 CE
37 VCC
36 NC
35 RESET
34 A11
33 A10
32 A9
31 A8
30 A7
29 A6
28 A5
27 A4
26 NC
25 NC
Am29F016
18805D-4
5
5 Page 
Table 4. Sector Group Addresses
A20 A19 A18 Sectors
SGA0
0
0
0 SA0–SA3
SGA1
0
0
1 SA4–SA7
SGA2
0
1
0 SA8–SA11
SGA3
0
1
1 SA12–SA15
SGA4
1
0
0 SA16–SA19
SGA5
1
0
1 SA20–SA23
SGA6
1
1
0 SA24–SA27
SGA7
1
1
1 SA28–SA31
Write
Device erasure and programming are accomplished
via the command register. The contents of the register
serve as inputs to the internal state machine. The state
machine outputs dictate the function of the device.
The command register itself does not occupy any ad-
dressable memory location. The register is a latch used
to store the commands, along with the address and
data information needed to execute the command. The
command register is written to by bringing WE to VIL,
while CE is at VIL and OE is at VIH. Addresses are
latched on the falling edge of WE or CE, whichever
happens later; while data is latched on the rising edge
of WE or CE, whichever happens first. Standard micro-
processor write timings are used.
Refer to AC Write Characteristics and the Erase/Pro-
gramming Waveforms for specific timing parameters.
Sector Group Protection
The Am29F016 features hardware sector group protec-
tion. This feature will disable both program and erase
operations in any combination of eight sector groups of
memory. Each sector group consists of four adjacent
sectors grouped in the following pattern: sectors 0–3,
4–7, 8–11, 12–15, 16–19, 20–23, 24–27, and 28–31
(see Table 4). The sector group protect feature is en-
abled using programming equipment at the user’s site.
The device is shipped with all sector groups unpro-
tected. Alternatively, AMD may program and protect
sector groups in the factory prior to shipping the device
(AMD’s ExpressFlash™ Service).
It is possible to determine if a sector group is protected
in the system by writing an Autoselect command. Per-
forming a read operation at the address location
XX02H, where the higher order address bits A18, A19,
and A20 is the desired sector group address, will pro-
duce a logical “1” at DQ0 for a protected sector group.
See Table 2 for Autoselect codes.
Temporary Sector Group Unprotect
This feature allows temporary unprotection of previ-
ously protected sector groups of the Am29F016 device
in order to change data in-system. The Sector Group
Unprotect mode is activated by setting the RESET pin
to high voltage (12V). During this mode, formerly pro-
tected sector groups can be programmed or erased by
selecting the sector group addresses. Once the 12 V is
taken away from the RESET pin, all the previously pro-
tected sector groups will be protected again. Refer to
Figures 15 and 16.
Command Definitions
Device operations are selected by writing specific ad-
dress and data sequences into the command register.
Writing incorrect address and data values or writ-
ing them in the improper sequence will reset the
device to the read mode. Table 5 defines the valid
register command sequences. Note that the Erase
Suspend (B0H) and Erase Resume (30H) commands
are valid only while the Sector Erase operation is in
progress. Moreover, both Reset/Read commands are
functionally equivalent, resetting the device to the read
mode.
Am29F016
11
11 Page | ||
| Páginas | Total 36 Páginas | |
| PDF Descargar | [ Datasheet AM29F016-75SC.PDF ] | |
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