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PDF BT258U Data sheet ( Hoja de datos )
| Número de pieza | BT258U | |
| Descripción | Thyristors logic level | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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Philips Semiconductors
Thyristors
logic level
Product specification
BT258U series
GENERAL DESCRIPTION
Passivated, sensitive gate thyristors
in a plastic envelope, intended for use
in general purpose switching and
phase control applications. These
devices are intended to be interfaced
directly to microcontrollers, logic
integrated circuits and other low
power gate trigger circuits.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
VDRM,
VRRM
IT(AV)
IT(RMS)
ITSM
BT258U-
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
500R 600R 800R
500 600 800
555
888
75 75 75
V
A
A
A
PINNING - SOT533
PIN
NUMBER
DESCRIPTION
1 cathode
2 anode
3 gate
tab anode
PIN CONFIGURATION
123
Top view
MBK915
SYMBOL
a
k
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VDRM, VRRM Repetitive peak off-state
voltages
IT(AV)
IT(RMS)
ITSM
I2t
dIT/dt
IGM
VGM
VRGM
PGM
PG(AV)
Tstg
Tj
Average on-state current half sine wave; Tmb ≤ 111 ˚C
RMS on-state current
all conduction angles
Non-repetitive peak
on-state current
half sine wave; Tj = 25 ˚C prior to
surge
t = 10 ms
t = 8.3 ms
I2t for fusing
t = 10 ms
Repetitive rate of rise of
on-state current after
triggering
ITM = 10 A; IG = 50 mA;
dIG/dt = 50 mA/µs
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
over any 20 ms period
Storage temperature
Operating junction
temperature
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
MAX.
-500R -600R -800R
5001 6001 800
5
8
75
82
28
50
2
5
5
5
0.5
150
1252
UNIT
V
A
A
A
A
A2s
A/µs
A
V
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.
March 1999
1
Rev 1.000
1 page  
Philips Semiconductors
Thyristors
logic level
MECHANICAL DATA
Dimensions in mm Net Mass: 1.3 g
Plastic single-ended package (Philips version of I-PAK); 3 leads (in-line)
Product specification
BT258U series
SOT533
D1
D
E
E1
A
A1
mounting
base
Q
L
12
e1
e
3
b
wM
c
0 2.5 5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A A1 b c D D1 E E1 e e1 L
Q
mm
2.38
2.22
0.89
0.71
0.89 0.56
0.71 0.46
7.28
6.94
1.06
0.96
6.73
6.47
5.36
5.26
4.57 2.285
9.8
9.4
1.00
1.10
OUTLINE
VERSION
SOT533
IEC
REFERENCES
JEDEC
EIAJ
TO-251
Fig.13. SOT533 (TO251). pin 2 connected to mounting base.
EUROPEAN
PROJECTION
ISSUE DATE
99-02-18
March 1999
5
Rev 1.000
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BT258U.PDF ] | |
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